2000 IXYS All rights reserved
1 - 2
V
RSM
V
RRM
Type
V
V
1200
1200
VUO 55-12NO7
1400
1400
VUO 55-14NO7
1600
1600
VUO 55-16NO7
1800
1800
VUO 55-18NO7*
* delivery time on request
Symbol
Test Conditions
Maximum Ratings
I
dAVM
T
C
= 85
C, module
58
A
I
FSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
750
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
820
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
670
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
740
A
I
2
t
T
VJ
= 45
C
t = 10 ms (50 Hz), sine
2800
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
2820
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
2250
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
2300
A
2
s
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+150
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL
1 mA
t = 1 s
3000
V~
M
d
Mounting torque (M5)
5
15 %
Nm
44
15 %
lb.in.
Terminal connection torque (M5)
3
15 %
Nm
26
15 %
lb.in.
Weight
typ.
260
g
Features
q
Package with screw terminals
q
Isolation voltage 3000 V~
q
Planar passivated chips
q
Blocking voltage up to 1800 V
q
Low forward voltage drop
q
UL registered E 72873
Applications
q
Supplies for DC power equipment
q
Input rectifiers for PWM inverter
q
Battery DC power supplies
q
Field supply for DC motors
Advantages
q
Easy to mount with two screws
q
Space and weight savings
q
Improved temperature and power
cycling
Symbol
Test Conditions
Characteristic Values
I
R
V
R
= V
RRM
;
T
VJ
= 25
C
0.3
mA
V
R
= V
RRM
;
T
VJ
= T
VJM
10.0
mA
V
F
I
F
= 150 A;
T
VJ
= 25
C
1.6
V
V
T0
For power-loss calculations only
0.85
V
r
T
8
m
W
R
thJC
per diode; DC current
2.7
K/W
per module
0.45
K/W
R
thJH
per diode; DC current
3.06
K/W
per module
0.51
K/W
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
I
dAVM
= 58 A
V
RRM
= 1200-1800 V
VUO 55
Three Phase
Rectifier Bridge
+
-
~
~
~
~
~
~
+
2000 IXYS All rights reserved
2 - 2
VUO 55
Fig. 1 Forward current versus
Fig. 2 Surge overload current per diode
Fig. 3 I
2
t versus time (1-10 ms)
voltage drop per diode
I
FSM
: Crest value. t: duration
per diode
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 5 Maximum forward current at
case temperature
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.036
0.013
2
0.149
0.034
3
0.615
1.35
4
1.9
23.0
Constants for Z
thJK
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.036
0.013
2
0.149
0.034
3
0.615
1.35
4
1.9
23.0
5
0.36
52.0
Fig. 6 Transient thermal impedance per diode
I
2
t
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