2003 IXYS All rights reserved
1 - 2
I
dAVM
= 43 A
V
RRM
= 1200-1600 V
V
RSM
V
RRM
Type
V
DSM
V
DRM
V
V
1300
1200
VVZ 40-12io1
1500
1400
VVZ 40-14io1
1700
1600
VVZ 40-16io1
Features
q
Package with DCB ceramic base plate
q
Isolation voltage 3600 V~
q
Planar passivated chips
q
Soldering terminals
q
UL registered E 72873
Applications
q
Input rectifier for switch mode power
supplies (SMPS)
q
Softstart capacitor charging
q
Electric drives and auxiliaries
Advantages
q
Easy to mount with two screws
q
Space and weight savings
q
Improved temperature and power
cycling
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
Dimensions in mm (1 mm = 0.0394")
Symbol
Test Conditions
Maximum Ratings
I
dAV
T
K
= 100
C; module
34
A
I
dAVM
module
43
A
I
FRMS
, I
TRMS
per leg
25
A
I
FSM
, I
TSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
320
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
340
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
290
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
310
A
I
2
t
T
VJ
= 45
C
t = 10 ms (50 Hz), sine
510
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
485
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
420
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
400
A
2
s
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 50 A
150
A/
s
f =400 Hz, t
P
=200
s
V
D
= 2/3 V
DRM
I
G
= 0.3 A,
non repetitive, I
T
= 1/3 I
dAV
500
A/
s
di
G
/dt = 0.3 A/
s
(dv/dt)
cr
T
VJ
= T
VJM
; V
DR
= 2/3 V
DRM
1000
V/
s
R
GK
=
; method 1 (linear voltage rise)
V
RGM
10
V
P
GM
T
VJ
= T
VJM
t
p
=
30
s
10
W
I
T
= I
TAVM
t
p
= 500
s
5
W
t
p
=
10 ms
1
W
P
GAVM
0.5
W
T
VJ
-40...+125
C
T
VJM
125
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz, RMS
t = 1 min
3000
V~
I
ISOL
1 mA
t = 1 s
3600
V~
M
d
Mounting torque
(M5)
2-2.5
Nm
(10-32 UNF)
18-22
lb.in.
Weight
typ.
28
g
303
VVZ 40
Three Phase Half Controlled
Rectifier Bridge
2
1
3
4
5
6
7
8
2
8
5
7
4
1
6
3
2003 IXYS All rights reserved
2 - 2
Symbol
Test Conditions
Characteristic Values
I
R
, I
D
V
R
= V
RRM
; V
D
= V
DRM
T
VJ
= T
VJM
5
mA
T
VJ
= 25
C
0.3
mA
V
F
, V
T
I
F
, I
T
= 30 A, T
VJ
= 25
C
1.33
V
V
T0
For power-loss calculations only
0.85
V
r
T
(T
VJ
= 125
C)
15
m
W
V
GT
V
D
= 6 V;
T
VJ
= 25
C
1.0
V
T
VJ
= -40
C
1.2
V
I
GT
V
D
= 6 V;
T
VJ
= 25
C
65
mA
T
VJ
= -40
C
80
mA
T
VJ
= 125
C
50
mA
V
GD
T
VJ
= T
VJM
;
V
D
= 2/3 V
DRM
0.2
V
I
GD
T
VJ
= T
VJM
;
V
D
= 2/3 V
DRM
5
mA
I
L
I
G
= 0.3 A; t
G
= 30
m
s
T
VJ
= 25
C
150
mA
di
G
/dt = 0.3 A/
m
s
T
VJ
= -40
C
200
mA
T
VJ
= 125
C
100
mA
I
H
T
VJ
= 25
C; V
D
= 6 V; R
GK
=
100
mA
t
gd
T
VJ
= 25
C; V
D
= 1/2 V
DRM
2
m
s
I
G
= 0.3 A; di
G
/dt = 0.3 A/
m
s
t
q
T
VJ
= 125
C; I
T
= 15 A, t
p
= 300
m
s, -di/dt = 10 A/
m
s
typ. 150
m
s
Q
r
V
R
= 100 V, dv/dt = 20 V/
m
s, V
D
= 2/3 V
DRM
75
m
C
R
thJC
per thyristor (diode); DC current
1.0 K/W
per module
0.17 K/W
R
thJH
per thyristor (diode); DC current
1.6 K/W
per module
0.27 K/W
d
S
Creeping distance on surface
7 mm
d
A
Creepage distance in air
7 mm
a
Max. allowable acceleration
50 m/s
2
VVZ 40
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