2005 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150C
500
V
V
DGR
T
J
= 25
C to 150C; R
GS
= 1 M
500
V
V
GS
Continuous
20
V
V
GSM
30
V
I
D25
T
C
= 25
C
36
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
108
A
I
AR
T
C
= 25
C
36
A
E
AR
T
C
= 25
C
50
mJ
E
AS
T
C
= 25
C
1.5
J
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
,
10
V/ns
T
J
150C, R
G
= 10
P
D
T
C
= 25
C
540
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
Maximum tab temperature for soldering
260
C
for 10s
M
d
Mounting torque(TO-247)
1.13/10 Nm/lb.in.
F
C
Mounting force (PLUS220)
20..120/4.5..15
N/lb
Weight
TO-247
6
g
TO-268
5 g
PLUS220
2
g
TO-3P 5.5 g
DS99228A(09/05)
PolarHV
TM
Power MOSFET
Advance Technical Information
N-Channel Enhancement
ModeAvalanche Rated
Fast Intrinsic Diode
IXTH 36N50P
IXTT 36N50P
IXTQ 36N50P
IXTV 36N50P
IXTV 36N50PS
V
DSS
= 500 V
I
D25
= 36 A
R
DS(on)
= 170 m
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
3.0
5.0
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
25
A
V
GS
= 0 V
T
J
= 125
C
250
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
170 m
Pulse test, t
300 s, duty cycle d 2 %
G = Gate
D = Drain
S = Source
TAB = Drain
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
TO-247 (IXTH)
(TAB)
TO-268 (IXTT)
G
S
D (TAB)
G
S
D
PLUS220 (IXTV)
TO-3P (IXTQ)
G
D
S
(TAB)
PLUS220 SMD(IXTV..S)
D (TAB)
D (TAB)
G
S
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH 36N50P IXTQ 36N50P IXTT 36N50P
IXT V36N50P IXTV 36N50PS
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
Symbol
Test Conditions Characteristic Values
(T
J
= 25
C unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
36
S
C
iss
4770
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
510
pF
C
rss
58
pF
t
d(on)
25
n s
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
27
n s
t
d(off)
R
G
= 18
(External)
75
n s
t
f
21
n s
Q
g(on)
134
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
29
nC
Q
gd
64
nC
R
thJC
0.23 K/W
R
thCK
(TO-247 and TO-3P)
0.21
K/W
(PLUS220) 0.21 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
C unless otherwise specified)
Symbol
Test Conditions
Min.
Typ.
Max.
I
S
V
GS
= 0 V
36
A
I
SM
Repetitive
108
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 s, duty cycle d 2 %
t
rr
I
F
= 18 A
400
n s
-di/dt = 100 A/
s
Fig. 2. Extended Output Characteristics
@ 25
C
0
10
20
30
40
50
60
70
80
0
2
4
6
8
10
12 14 16 18
20 22 24
V
D S
- Volts
I
D
-
A
m
p
e
re
s
V
GS
= 10V
8V
5.5V
5V
6V
6.5V
7V
Fig. 1. Output Characteristics
@ 25
C
0
4
8
12
16
20
24
28
32
36
0
1
2
3
4
5
6
7
V
D S
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 10V
8V
7V
5V
6V
5.5V
Characteristic Curves
2005 IXYS All rights reserved
IXTH 36N50P IXTQ 36N50P IXTT 36N50P
IXT V36N50P IXTV 36N50PS
Fig. 3. Output Characteristics
@ 125
C
0
4
8
12
16
20
24
28
32
36
0
2
4
6
8
10
12
14
16
V
D S
- Volts
I
D
-
A
m
p
e
re
s
V
GS
= 10V
7V
6V
4.5V
5V
5.5V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S
(
o
n )
- N
o
rm
a
l
i
z
e
d
I
D
= 36A
I
D
= 18A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
5
10
15
20
25
30
35
40
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
-
A
m
p
e
re
s
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.6
1
1.4
1.8
2.2
2.6
3
3.4
0
10
20
30
40
50
60
70
80
I
D
- Amperes
R
D
S
(
o
n )
- N
o
rm
a
l
i
z
e
d
T
J
= 125C
T
J
= 25C
V
GS
= 10V
Fig. 7. Input Adm ittance
0
5
10
15
20
25
30
35
40
45
50
55
4
4.5
5
5.5
6
6.5
7
V
G S
- Volts
I
D
- A
m
p
e
re
s
T
J
= 125C
25C
-40C
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
80
90
I
D
- Amperes
g
f s
-
S
i
em
en
s
T
J
= -40C
25C
125C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH 36N50P IXTQ 36N50P IXTT 36N50P
IXT V36N50P IXTV 36N50PS
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
Fig. 11. Capacitance
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
D S
- Volts
C
a
pa
c
i
t
a
nc
e -
pi
c
o
F
a
r
a
d
s
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100
120
140
Q
G
- nanoCoulombs
V
G S
- V
o
l
t
s
V
DS
= 250V
I
D
= 18A
I
G
= 10mA
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
10
20
30
40
50
60
70
80
90
100
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
V
S D
- Volts
I
S
- A
m
p
e
r
e
s
T
J
= 125C
T
J
= 25C
Fig. 12. Forw ard-Bias
Safe Operating Area
1
10
100
1000
10
100
1000
V
D S
- Volts
I
D
-
A
m
p
e
r
e
s
100s
1ms
DC
T
J
= 150C
T
C
= 25C
R
DS(on)
Limit
10ms
25s
Fig. 13. M axim um Tr ans ie nt The rm al Re s is tance
0.01
0.10
1.00
0.1
1
10
100
1000
Pulse Width - milliseconds
R
( t
h
) J
C
-
C / W
2005 IXYS All rights reserved
TO-247 AD (IXTH) Outline
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205
0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232
0.252
R
4.32
5.49
.170
.216
S
6.15
BSC
242
BSC
D1
L
L3
L1
E1
e
E
b
D
c
A2
A1
A
L2
Terminals: 1-Gate 2-Drain
E1
E
L2
D
L3
L
L1
3X b
2X e
c
A2
A1
A
E1
D1
PLUS220 (IXTV) Outline
TO-3P (IXTQ) Outline
L
L3
L2
L1
A1
E1
e
D1
E
b
D
c
A2
A
A3
L4
Terminals: 1-Gate 2-Drain
E
E1
D
L2
A
A1
L1
L
L3
e
2X b
c
A2
L4
A3
E1
Package Outline Drawings
TO-268 (IXTT) Outline
IXTH 36N50P IXTQ 36N50P IXTT 36N50P
IXTV 36N50P IXTV 36N50PS
PLUS220SMD (IXTV..S) Outline
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