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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate MOSFET
2N7002M
MOSFET( N-Channel )
DESCRIPTION
High cell density, DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable, and fast switching
performance. They can be used in most applications requiring up to 400mA DC
and can deliver pulsed currents up to 2A. These products are particularly suited
for low voltage, low current applications such as small servo motor control, power
MOSFET gate drivers, and other switching applications.
FEATURES
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
APPLICATION
N-Channel Enhancement Mode Field Effect Transistor
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: 72
D
72
G S
MAXIMUM RATINGS* T
A
=25
unless otherwise noted
Symbol Parameter Value
Units
V
DS
Drain-Source voltage
60
V
I
D
Drain Current
115
mA
P
D
Power Dissipation
150
mW
R
JA
Thermal Resistance. Junction to Ambient Air
625
/W
T
J
Junction Temperature
150
T
stg
Storage Temperature
-55-150
WBFBP-03B
(1.21.20.5)
unit: mm
1. GATE
2. SOURCE
3. DRAIN
ELECTRICAL CHARACTERISTICS(Ta=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
V
GS
=0V,I
D
=10A 60
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
=0V,I
D
=3mA 60
Gate-Threshold Voltage*
V
th(GS)
V
DS
=V
GS
, I
D
=250A 1
2.5
V
Gate-body Leakage
l
GSS
V
DS
=0V, V
GS
=25V
100
nA
V
DS
=60V, V
GS
=0V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
=60V,V
GS
=0V,T
j
=125
500
A
On-state Drain Current*
I
D(ON)
V
GS
=10V, V
DS
=7V 500
mA
V
GS
=10V, I
D
=500mA
1.2
7.5
Drain-Source On-Resistance*
R
DS(0n)
V
GS
=5V, I
D
=50mA
1.7
7.5
V
GS
=10V, I
D
=500mA
3.75
Drain-Source On- Voltage *
V
DS(0n)
V
GS
=5V, I
D
=50mA
0.375
V
Forward Tran conductance*
g
ts
V
DS
=10V, I
D
=200mA 80
ms
Diode Forward Voltage
V
SD
I
S
=115mA, V
GS
=0V
1.2
V
Input Capacitance
C
iss
50
Output Capacitance
C
OSS
25
Reverse Transfer Capacitance
C
rSS
V
DS
=25V, V
GS
=0V,f=1MHz
5
pF
*
Pulse test , pulse width300s, duty cycle2% .
SWITCHING TIME
Turn-on Time
t
d(0n)
20
Turn-off Time
t
d(off)
V
DD
=25V,R
G
=25
I
D
=500mA,V
GEN
=10V
R
L
=50
40
ns
M in .
M a x .
M in .
M a x .
A
0 .4 5 0
0 .5 5 0
0 .0 1 8
0 .0 2 2
A 1
0 .0 1 0
0 .0 9 0
0 .0 0 0
0 .0 0 4
b
0 .1 7 0
0 .2 7 0
0 .0 0 7
0 .0 1 1
b 1
0 .2 7 0
0 .3 7 0
0 .0 1 1
0 .0 1 5
b 2
D
1 .1 5 0
1 .2 5 0
0 .0 4 5
0 .0 4 9
E
1 .1 5 0
1 .2 5 0
0 .0 4 5
0 .0 4 9
D 2
E 2
e
L
L 1
L 2
k
z
0 .0 9 0 R E F .
0 .0 0 4 R E F .
0 .2 3 0 R E F .
0 .1 5 0 R E F .
0 .0 0 9 R E F .
0 .0 1 0 R E F .
0 .3 0 0 R E F .
0 .0 1 2 R E F .
0 .2 8 0 R E F .
0 .0 1 1 R E F .
0 .0 0 6 R E F .
S y m b o l
D im e n s io n s In M illim e t e r s
D im e n s io n s In In c h e s
0 .8 0 0 T Y P .
0 .0 3 2 T Y P .
0 .4 7 0 R E F .
0 .8 1 0 R E F .
0 .0 0 2 R E F .
0 .0 3 2 R E F .
0 .2 5 0 R E F .
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