JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SA1179
TRANSISTOR (PNP)
FEATURES
. High breakdown voltage
MARKING: M
MAXIMUM RATINGS* T
A
=25
unless otherwise noted
Symbol Parameter Value
Units
V
CBO
Collector-Base Voltage
-55 V
V
CEO
Collector-Emitter Voltage
-50
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current -Continuous
-150
mA
P
D
Total Device Dissipation
200
mW
T
J
, T
stg
Junction and Storage Temperature
-55-125
*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
ELECTRICAL CHARACTERISTICS(Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=-10u A,I
E
=0 -55
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=-1mA,I
B
=0 -50
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=-10 u A,I
C
=0 -5
V
Collector cut-off current
I
CBO
V
CB
=-35V,I
E
=0
-0.1
u
A
Emitter cut-off current
I
EBO
V
EB
=-4V,I
C
=0
-0.1
u
A
DC current gain
h
FE
V
CE
=-6V,I
C
=-1mA
200 400
Collector-emitter saturation voltage
V
CE(sat)
I
C
=-50mA,I
B
=-5mA
-0.5
V
Base -emitter saturation voltage
V
BE(sat)
I
C
=-50mA,I
B
=-5mA
-1.0
V
Transition frequency
f
T
V
CE
=-6V,I
C
=-10mA
180
MHz
Collector output capacitance
C
ob
V
CB
=-6V,I
E
=0,f=1MHz
4
pF
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
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