1
.
9
2. 80 0. 05
1. 60 0. 05
0
.
3
5
2
.
9
2
0
.
0
5
0
.
9
5
0
.
0
2
5
1
.
0
2
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate Transistors
2SC3052
TRANSISTOR (NPN)
FEATURES
Power dissipation
P
CM
: 0.15 W (Tamb=25
)
Collector current
I
CM
: 0.2 A
Collector-base voltage
V
(BR)CBO
: 50 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=100
A, I
E
=0
50 V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic= 100
A, I
B
=0
50 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=100
A, I
C
=0
6 V
Collector cut-off current
I
CBO
V
CB
=50 V , I
E
=0
0.1
A
Emitter cut-off current
I
EBO
V
EB
= 6V , I
C
=0
0.1
A
h
FE(1)
V
CE
=6V, I
C
=1mA 150
800
DC current gain
h
FE(2)
V
CE
=6V, I
C
=0.1mA 50
Collector-emitter saturation voltage
V
CE(sat)
I
C
=100 mA, I
B
=10mA
0.3 V
Base-emitter saturation voltage
V
BE(sat)
I
C
=100mA, I
B
=10mA
1 V
Transition frequency
f
T
V
CE
=6V, I
C
= 10mA
180 MHz
CLASSIFICATION OF h
FE
(1)
Marking LE LF LG
Range
150-300 250-500 400-800
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
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