JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
3CA1837
TRANSISTOR (PNP)
FEATURES
.
High Transition Frequency : f
T
=70MH
Z
(Typ)
.
Complementary to 3DA4793
. Collector Power Dissipation
P
CM
: 2W (Tamb=25
)
20 W (Tcase=25
)
MAXIMUM RATINGS* T
A
=25
unless otherwise noted
Symbol Parameter Value
Units
V
CBO
Collector-Base Voltage
-230
V
V
CEO
Collector-Emitter Voltage
-230
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current -Continuous
-1000
mA
I
B
Base Current
-100
mA
T
J
Junction Junction
150
T
stg
Storage Junction
-55-150
*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=-100A , I
E
=0 -230
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=-1mA, I
B
=0 -230
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=-100A, I
C
=0 -5
V
Collector cut-off current
I
CBO
V
CB
=-230V, I
E
=0
-10
A
Emitter cut-off current
I
EBO
V
EB
=-5V, I
C
=0
-10
A
DC current gain
h
FE
V
CE
=-5V, I
C
=-100mA
100 320
Collector-emitter saturation voltage
V
CE(sat)
I
C
=-500mA, I
B
=-50mA
-1.5
V
Transition frequency
f
T
V
CE
=-10V, I
C
=-100mA 30
MHz
TO-220F
1. BASE
2. COLLECTOR
3. EMITTE
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