JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13002/ 3DD13002B
TRANSISTOR (NPN)
FEATURE
Power dissipation
P
CM:
900 mW (Tamb=25
)
Collector current
I
CM:
3DD13002: 1 A
3DD13002B: 0.8 A
Collector-base voltage
V
(BR)CBO:
600 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic=100
A, I
E
=0
600 V
Collector-emitter breakdown voltage
V(BR)
CEO
Ic= 1mA, I
B
=0 400 V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= 100
A, I
C
=0
6 V
Collector cut-off current
I
CBO
V
CB
= 600V, I
E
=0
100
A
Emitter cut-off current
I
EBO
V
EB
= 6V, I
C
=0
100
A
h
FE(1)
V
CE
= 10V, I
C
= 200 mA
9
40
h
FE(2)
V
CE
= 10V, I
C
= 10 mA
6
Collector-emitter saturation voltage
V
CE
(sat) I
C
=200mA, I
B
= 40 mA
0.5
V
Base-emitter saturation voltage
V
BE
(sat) I
C
=200mA, I
B
=40 mA
1.1
V
Transition frequency
f
T
V
CE
=10V, Ic=100mA
f =1MHz
5
MHz
Fall time
t
f
0.5
s
Storage time
t
s
I
C
=1A, I
B1
=-I
B2
=0.2A
V
CC
=100V
2.5
s
CLASSIFICATION OF h
FE
(1)
Range
9-15 15-20 20-25 25-30 30-35 35-40
1
2
3
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
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