JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
8050SS
TRANSISTOR
NPN
FEATURES
Power dissipation
P
CM
: 1 W
Tamb=25
Collector current
I
CM
: 1.5 A
Collector-base voltage
V
(BR)CBO
: 40 V
Operating and storage junction temperature range
T
J
T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= 100
A
I
E
=0
40
V
Collector-emitter breakdown voltage
V(BR)
CEO
I
C
= 0.1 mA , I
B
=0
25
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= 100
A
I
C
=0
5
V
Collector cut-off current
I
CBO
V
CB
= 40 V , I
E
=0
0.1
A
Collector cut-off current
I
CEO
V
CE
= 20 V , I
B
=0
0.1
A
Emitter cut-off current
I
EBO
V
EB
= 5 V , I
C
=0
0.1
A
h
FE
1
V
CE
= 1 V , I
C
= 100 mA
85
300
DC current gain
h
FE
2
V
CE
= 1 V , I
C
=800 mA
40
Collector-emitter saturation voltage
V
CE
(sat)
I
C
= 800 mA, I
B
= 80 mA
0.5
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
= 800mA, I
B
= 80 mA
1.2
V
Transition frequency
f
T
V
CE
= 10 V, I
C
= 50mA
f =30
MHz
100
MHz
CLASSIFICATION OF h
FE(1)
Rank
B
C
D
Range
85-160
120-200
160-300
1
2
3
TO
--
92
1.EMITTER
2. COLLECTOR
3. BASE
D
b
E
A
A
1
C
L
D1
e
e1
TO-92 PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Min
3.300
1.100
0.380
0.360
4.400
3.430
4.300
2.440
14.100
0.000
Max
3.700
1.400
0.550
0.510
4.700
4.700
2.640
14.500
1.600
0.380
Min
0.130
0.043
0.015
0.014
0.173
0.135
0.169
0.096
0.555
0.000
Max
0.146
0.055
0.022
0.020
0.185
0.185
0.104
0.571
0.063
0.015
Dimensions In Millimeters
Dimensions In Inches
0.050TYP
1.270TYP
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