JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
8050S
TRANSISTOR
NPN
FEATURES
Power dissipation
P
CM
: 0.625 W
Tamb=25
Collector current
I
CM
: 0.5 A
Collector-base voltage
V
(BR)CBO
: 40 V
Operating and storage junction temperature range
T
J
T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= 100
, I
E
=0
40
V
Collector-emitter breakdown voltage
V(BR)
CEO
Ic= 1 mA
I
B
=0
25
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= 100
A
I
C
=0
5
V
Collector cut-off current
I
CBO
V
CB
= 40 V , I
E
=0
0.1
A
Collector cut-off current
I
CEO
V
CE
= 20 V , I
B
=0
0.1
A
Emitter cut-off current
I
EBO
V
EB
= 3 V
I
C
=0
0.1
A
h
FE
1
V
CE
= 1 V, I
C
= 50mA
85
300
DC current gain
h
FE
2
V
CE
= 1 V, I
C
= 500mA
50
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=500mA, I
B
=50 mA
0.6
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=500mA, I
B
=50 mA
1.2
V
Transition frequency
f
T
V
CE
= 6 V, IC=20mA
f =
30MHz
150
MHz
CLASSIFICATION OF h
FE
(1)
Rank
B
C
D
Range
85-160
120-200
160-300
1
2
3
TO
--
92
1.EMITTER
2. COLLECTOR
3.BASE
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