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Электронный компонент: B5817W

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diode
B5817W
SCHOTTKY BARRIER DIODE
FEATURES

Power dissipation
P
D
: 450 mW
Tamb=25
Collector current
I
F
: 1 A
Collector-base voltage
V
R
: 20 V
Operating and storage junction temperature range
T
J
T
stg
: -55
to +150


MARKINGSJ

ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Reverse breakdown voltage
V
(BR)
I
R
= 1mA
20
V
Reverse voltage leakage current
I
R
V
R
=20V
1
Forward voltage
V
F
I
F
=1A
I
F
=3A

0.45
0.75
V
Diode capacitance
C
D
V
R
=4V f=1MHz
120

















Unit
mm
c
b
D
0
.
2
0
E
A1
A2
A
E1
L
L1
SOD-123 PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
A2
b
c
D
E
E1
L
L1
Min
1.050
0.000
1.050
0.450
0.080
1.500
2.600
3.550
0.250
0
Max
1.250
0.100
1.150
0.650
0.150
1.700
2.800
3.850
0.450
8
Min
0.041
0.000
0.041
0.018
0.003
0.059
0.102
0.140
0.010
0
Max
0.049
0.004
0.045
0.026
0.006
0.067
0.110
0.152
0.018
8
Dimensions In Millimeters
Dimensions In Inches
0.020REF
0.500REF