JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diode
B5817WS
SCHOTTKY BARRIER DIODE
FEATURES
Power dissipation
P
D
: 200 mW (Tamb=25
)
Collector current
I
F
: 1 A
Collector-base voltage
V
R
: 20 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
to +150
MARKING: SJ
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Reverse breakdown voltage
V
(BR)
I
R
= 1mA
20
V
Reverse voltage leakage current
I
R
V
R
=20V
1
mA
Forward voltage
V
F
I
F
=1A
I
F
=3A
0.45
0.75
V
Diode capacitance
C
D
V
R
=4V, f=1MHz
120
pF
SOD-323
+
-
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