JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03Z Plastic-Encapsulate Diodes
FBAP50-05W
pin Diodes
DESCRIPTION
Silicon planar
FEATURES
Two elements in common cathode configuration
in a small-sized package
Low diode capacitance
Low diode forward resistance..
APPLICATION
General RF applications.
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: W4
3
W4
1 2
Maximum Ratings and Electrical Characteristics, Single Diode @T
A
=25
Parameter Symbol
Limits
Unit
Continuous reverse voltage
V
R
50
V
Continuous Forward Current
I
F
50
mA
Power Dissipation
(T
A
=90
)
Pd 150
mW
thermal resistance from junction to soldering point
Rthj-s 250
K/W
Junction temperature
T
j
-65~+150
Storage temperature range
T
STG
-65~+150
WBFBP-03Z
(220.5)
unit: mm
1
3
2
Electrical Characteristics @T
A
=25
Parameter Symbol
Min.
Typ.
Max.
Unit
Conditions
Continuous reverse voltage
V
R
50 V
I
R
=10A
Forward voltage
V
F
1.1
V
I
F
=50mA
Reverse current
I
R
100
nA
V
R
=50V
C
d1
1.1
pF
V
R
=0V,f=1MHz
C
d2
0.6
pF
V
R
=1V,f=1MHz
Diode capacitance
C
d3
0.5
pF
V
R
=5V,f=1MHz
r
D
40
I
F
=0.5mA , f=100MHz
r
D
25
I
F
=1mA , f=100MHz
Diode forward resistance
r
D
5
I
F
=10mA , f=100MHz
charge carrier life time
L
1.05 S
When switched from I
F
=10mA
to I
R
=6mA; R
L
=100;measured
at I
R
=3mA
series inductance
L
S
1.6 nH IF=100mA;
f=100MHz
Typical Characteristics FBAP50-05W
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