JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
BD034
TRANSISTOR (PNP)
FEATURES
Power dissipation
P
CM:
1.25 W (Tamb=25
)
Collector current
I
CM:
-2.5 A
Collector-base voltage
V
(BR)CBO
: -110 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=
-100
A, I
E
=0
-110 V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=
-10
mA, I
B
=0
-80 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=
-100
A, I
C
=0
-7 V
Collector cut-off current
I
CBO
V
CB
=
-100
V, I
E
=0
-1
A
Emitter cut-off current
I
EBO
V
EB
=
-5
V, I
C
=0
-1
A
h
FE(1)
V
CE
=
-2
V, I
C
=
-100
mA
100 560
DC current gain
h
FE(2)
V
CE
=
-2
V, I
C
=
-1.5
A
40
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
-2
A, I
B
=
-200
mA
-0.5
V
Base-emitter voltage
V
BE
V
CE
=
-5
V, I
C
=
-500
mA
-1
V
Transition frequency
f
T
V
CE
=
-1
V, I
C
=
-250
mA, f=1MHz
3 MHz
CLASSIFICATION OF h
FE(1)
Rank R S T U
Range
100-200 140-280 200-400 280-560
1 2 3
TO-126
1. EMITTER
2. COLLECTOR
3. BASE
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