JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
D882
TRANSISTOR
NPN
FEATURES
Power dissipation
P
CM
: 1.25 W
Tamb=25
Collector current
I
CM
: 3 A
Collector-base voltage
V
(BR)CBO
: 40 V
Operating and storage junction temperature range
T
J
T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic=100
A
I
E
=0
40
V
Collector-emitter breakdown voltage
V(BR)
CEO
I
C
= 10 mA , I
B
=0
30
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= 100
A
I
C
=0
6
V
Collector cut-off current
I
CBO
V
CB
=40 V , I
E
=0
1
A
Collector cut-off current
I
CEO
V
CE
=30 V , I
B
=0
10
A
Emitter cut-off current
I
EBO
V
EB
=6V , I
C
=0
1
A
h
FE
1
V
CE
= 2V, I
C
= 1A
60
400
DC current gain
h
FE
2
V
CE
=2V, I
C
= 100mA
32
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=2A, I
B
= 0.2A
0.5
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=2A, I
B
= 0.2A
1.5
V
Transition frequency
f
T
V
CE
=5 V, I
C
=0.1mA
f =
10MHz
50
MHz
CLASSIFICATION OF h
FE
(1)
Rank
R
O
Y
GR
Range
60-120
100-200
160-320
200-400
1 2 3
TO
--
126
1. EMITTER
2.COLLECTOR
3.BASE
D
C
A
A1
b
b1
E
P
L
L
1
e
e1
TO-126 PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
b
b1
c
D
E
e
e1
L
L1
P
Min
2.500
1.100
0.660
1.170
0.450
7.400
10.600
4.480
15.300
2.100
3.900
3.000
Max
2.900
1.500
0.860
1.370
0.600
7.800
11.000
4.680
15.700
2.300
4.100
3.200
Min
0.098
0.043
0.026
0.046
0.018
0.291
0.417
0.176
0.602
0.083
0.154
0.118
Max
0.114
0.059
0.034
0.054
0.024
0.307
0.433
0.184
0.618
0.091
0.161
0.126
Dimensions In Millimeters
Dimensions In Inches
0.090TYP
2.290TYP
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