1. BASE
2. EMITTER
3. COLLECTOR
TRANSISTOR (NPN)
Power dissipation
P
CM:
0.2
W (Tamb=25 )
Collector current
I
CM:
0.1 A
Collector-base voltage
V
(BR)CBO:
50 V
Operating and storage junction temperature range
T
J,
T
stg:
-55 to +150
V
(BR)CBO
Ic=
50
A,I
E
=0
50
V
V
(BR)CEO
Ic=
1
mA,I
B
=0
50
V
V
(BR)EBO
I
E
=
50
A,I
C
=0
5
V
I
CBO
V
CB
=
50
V,I
E
=0
0.5
uA
I
EBO
V
EB
=
4
V,I
C
=0
0.5
uA
h
FE
V
CE
=
5
V,I
C
=
1
mA
100
250
600
V
CE(sat)
I
C
=10mA,I
B
=1mA
0.3
V
f
T
V
CE
=
10
V,I
C
=
5
mA, f=
100
MHz
250
MHz
R1
7
10
13
k
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