JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital transistors (built-in resistors)
DTC144TE/ DTC144TUA/
DTC144TCA/DTC144TKA/DTC144TSA
DIGITAL TRANSISTOR (NPN)
Features
1) Built-in bias resistors enable the configuration of an inverter circuit without
connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to
allow negative biasing of the input. They also have the advantage of almost
completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making device
design easy.
PIN CONNENCTIONS AND MARKING
(1) Emitter
(2) Collector
(3) Base
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
Addreviated symbol:
06
SOT-523
Addreviated symbol:
06
SOT-23-3L
SOT-23
SOT-323
TO-92S
DTC144TE
DTC144TUA
DTA114ECA
DTC144TCA
DTC144TKA
DTC144TSA
Addreviated symbol:
06
Addreviated symbol:
06
MAXIMUM RATINGS* T
A
=25 unless otherwi
se noted
LIMITS(DTC144T
)
Symbol Parameter
E UA KA CA
SA
Units
V
CBO
Collector-Base Voltage
50 V
V
CEO
Collector-Emitter Voltage
50 V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current -Continuous
100
mA
P
C
Collector Dissipation
150
200
300
mW
Tj
Junction temperature
150
T
J
, T
stg
Junction and Storage Temperature
-55~+150
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=
50
A,I
E
=0
50 V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=
1
mA,I
B
=0
50 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=
50
A,I
C
=0
5 V
Collector cut-off current
I
CBO
V
CB
=
50
V,I
E
=0
0.5
uA
Emitter cut-off current
I
EBO
V
EB
=
4
V,I
C
=0
0.5
uA
DC current gain
h
FE
V
CE
=
5
V,I
C
=
1
mA
100 300 600
Collector-emitter saturation voltage
V
CE(sat)
I
C
=5mA,I
B
=0.5mA
0.3
V
Transition frequency
f
T
V
CE
=
10
V,I
E
=-
5
mA, f=
100
MHz
250 MHz
Imput resistor
R1
32.9
47
61.1
k
Typical Characteristics
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