WBFBP-06C
(220.5)
unit: mm
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diode
FBAS40DW-04
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
DESCRIPTION
Silicon epitaxial planar
PN Junction Guard Ring for Schottky Diode
FEATURES
Low Forward Voltage Drop
Fast Switching
Ultra-Small Surface Mount Package
APPLICATION
For General Purpose Switching Applications, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
Maximum Ratings @T
A
=25
Parameter Symbol
Limits
Unit
Peak Repetitive reverse voltage
DC Blocking Voltage
V
RM
V
R
40 V
Average Rectified Output Current
I
O
40
mA
Power Dissipation
Pd
150
mW
Thermal Resistance. Junction to Ambient Air
R
JA 625
/W
Junction temperature
T
J
125
Storage temperature range
T
STG
-65-125
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Reverse voltage leakage current
I
R
V
R
=30V
200
nA
Forward voltage
V
F
I
F
=1mA
I
F
=40mA
380
1000
mV
Total capacitance
C
T
V
R
=0,f=1MHz
5
pF
Reverse recovery time
t
r r
I
F
= I
R
=10mA,Irr=0.1
I
R,
R
L
=100
5
nS
1
FBAS40DW-04
Marking:K44
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