WBFBP-06C
(220.5)
unit: mm
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diode
F
BAS70TW
SURFACE MOUNT
SCHOTTKY BARRIER DIODE ARRAYS
DESCRIPTION
Silicon epitaxial planar
PN Junction Guard Ring for Schottky Diode
FEATURES
Low Forward Voltage Drop
Fast Switching
Ultra-Small Surface Mount Package
APPLICATION
For General Purpose Switching Applications, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
FBAS70TW
Marking:K73
Maximum Ratings @T
A
=25
Parameter Symbol Limits
Unit
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
70
V
Forward Continuous Current
I
F
70
mA
Peak forward surge current @<1.0s
I
FSM
100
mA
Power Dissipation
Pd
150
mW
Thermal Resistance Junction to Ambient
R
JA
625
/W
Junction temperature
T
J
125
Storage temperature range
T
STG
-55 to +125
Electrical Ratings @T
A
=25
Parameter
Symbol Min.
Typ.
Max.
Unit
Conditions
V
F1
0.41
V I
F
=1mA
Forward voltage
V
F2
1
V I
F
=15mA
Reverse current
I
R
100
nA V
R
=50V
Capacitance between terminals
C
T
2
pF V
R
=0V,f=1MHz
Reverse Recovery Time
t
rr
5
ns
I
F
=I
R
=10mA
Irr=0.1XI
R
,R
L
=100
1
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