JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
FMMT4124
TRANSISTOR
NPN
FEATURES
Power dissipation
P
CM
0.33W
Tamb=25
Collector current
I
CM
0.2A
Collector-base voltage
V
(BR) CBO
30V
Operating and storage junction temperature range
T
J
T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=10
A
I
E
=0
30
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic= 1mA
I
B
=0
25
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
= 10
A
I
C
=0
5
V
Collector cut-off current
I
CBO
V
CB
= 20 V , I
E
=0
0.05
A
Emitter cut-off current
I
EBO
V
EB
= 3V , I
C
=0
0.05
A
DC current gain
H
FE
V
CE
= 1V, I
C
= 2mA
120
360
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=50 mA, I
B
= 5mA
0.3
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=50 mA, I
B
= 5mA
0.95
V
Transition frequency
f
T
V
CE
=20V, I
C
= 10mA
f =100MHz
300
MHz
Marking
FMMT4124
2C
Unit : mm
SOT
--
23
1. BASE
2. EMITTER
3. COLLECTOR
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