JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-02L Plastic-Encapsulate Diodes
FRB751
Schottky barrier Diodes
DESCRIPTION
Silicon epitaxial planar
FEATURES
Small surface mounting type
Low reverse current and low forward voltage
High reliability
APPLICATION
High speed switching For Detection
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: 5
5
Maximum Ratings and Electrical Characteristics, Single Diode @T
A
=25
Parameter Symbol
Limits
Unit
Peak reverse voltage
V
RM
40 V
DC reverse voltage
V
R
30 V
Mean rectifying current
I
O
30 mA
Peak forward surge current
I
FSM
150 mA
Junction temperature
T
j
125
Storage temperature
T
stg
-40~125
Electrical Ratings @T
A
=25
Parameter
Symbol Min.
Typ.
Max.
Unit
Conditions
Forward voltage
V
F
0.37
V
I
F
=1mA
Reverse current
I
R
0.5
A
V
R
=30V
Capacitance between terminals
C
T
2 pF
V
R
=1V,f=1MHZ
WBFBP-02L
(0.80.60.45)
unit: mm
1
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