JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Power management Dual-transistors
FUMF21N
TRANSISTOR
DESCRIPTION
Silicon epitaxial planar transistor
FEATURES
2SA2018 and DTC114E are housed independently
in a package.
Power switching circuit in a single package.
Mounting cost and area can be cut in half.
APPLICATION
Power management circuit, mobile telephone quiver circuit
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:F21
F21
TR1
MAXIMUM RATINGS T
A
=25
unless otherwise noted
DTR2 Absolute maximum ratings(Ta=25
)
Parameter Symbol
Limits
Unit
Supply voltage
V
CC
50
V
Input voltage
V
IN
-10~40
V
I
O
50
Output current
I
C(MAX)
100
mA
Power dissipation
Pd 150
mW
Junction temperature
Tj 150
Storage temperature
Tstg -55~150
Symbol Parameter Value
Units
V
CBO
Collector- Base Voltage
-15
V
V
CEO
Collector-Emitter Voltage
-12
V
V
EBO
Emitter-Base Voltage
-6
V
I
C
Collector Current -Continuous
-0.5
A
P
C
Collector Dissipation
0.15 W
T
J
Junction Temperature
150
T
stg
Storage Temperature
-55-150
WBFBP-06C
(220.5)
unit: mm
1
TR1 ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
I
C
=-10
A, I
E
=0
-15 V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
=-1mA, I
B
=0 -12
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=-10
A, I
C
=0
-6 V
Collector cut-off current
I
CBO
V
CB
= -15 V, I
E
=0
-0.1
A
Emitter cut-off current
I
EBO
V
EB
=- 6V, I
C
=0
-0.1
A
DC current gain
h
FE
V
CE
=-2V, I
C
=-10mA
270
680
Collector-emitter saturation voltage
V
CE(sat)
I
C
=-200mA,I
B
=-10mA
-0.25
V
Transition frequency
f
T
V
CE
=-2V,I
C
=-10mA, f=
100
MHz
260 MHz
Collector output capacitance
C
ob
V
CB
=-
10
V,I
E
=0,f=
1
MHz
6.5 pF
DTR2 Electrical characteristics (Ta=25
)
Parameter
Symbol
Min.
Typ
Max.
Unit
Conditions
V
I(off)
0.5
V
CC
=5V ,I
O
=100A
Input voltage
V
I(on)
3
V
V
O
=0.3V ,I
O
=10 mA
Output voltage
V
O(on)
0.3 V
I
O
/I
I
=10mA/0.5mA
Input current
I
I
0.88
mA
V
I
=5V
Output current
I
O(off)
0.5 A
V
CC
=50V, V
I
=0
DC current gain
G
I
30
V
O
=5V ,I
O
=5mA
Input resistance
R
1
7 10 13 K
Resistance ratio
R
2
/R
1
0.8 1 1.2
Transition frequency
f
T
250
MHz
V
CE
=10V ,I
E
=-5mA,f=100MHz
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