JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
K596
Si N-CHANNEL JUNCTION FET
FEATURES
Power dissipation
P
CM
: 0.1W
Tamb=25
Gate Current
I
G
: 10mA
Drain current
I
D
: 1mA
Drain-Source voltage
BV
GDO
: -20 V
Operating and storage junction temperature range
T
J
T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Gate-Drain breakdown Voltage
BV
GDO
I
G
= -100
A
-20
V
Gate-Source cut-off Voltage
V
GS(off)
V
DS
= 5V , I
D
=1
A
-0.6
-1.5
V
Drain Current
I
DSS
V
DS
= 5 V , V
GS
=0
100
800
A
Forward Transfer Admittance
|Y
FS
|
V
DS
= 5V , V
GS
=0, f=1KHz
0.4
1.2
Input Capacitance
C
iss
V
DS
=5V, V
GS
=0, f=1MHz
3.5
pF
Output Capacitance
C
RSS
V
DS
= 5 V, V
GS
=0
f =
1MHz
0.65
pF
I
DSS
Classification
Classification
A
B
C
D
E
I
DSS
(A)
100-170
150-240
210-350
320-480
440-800
1.SOURCE
2.GATE
3.DRAIN
123
D
E
A
A
1
c
L
D1
b
e
e1
TO-92S PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Min
1.240
0.660
0.380
0.360
3.850
2.970
3.010
2.440
15.100
Max
1.620
0.860
0.550
0.510
4.150
3.270
3.310
2.640
15.500
Min
0.056
0.026
0.015
0.014
0.152
0.117
0.119
0.096
0.594
Max
0.064
0.034
0.022
0.020
0.163
0.129
0.130
0.104
0.610
Dimensions In Millimeters
Dimensions In Inches
0.050TYP
45TYP
1.270TYP
45TYP
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