JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
KSC2331
TRANSISTOR NPN
FEATURE
Power dissipation
P
CM
: 1 W Tamb=25
Collector current
I
CM
: 0.7 A
Collector-base voltage
V
(BR)CBO
: 80 V
Operating and storage junction temperature range
TO-92L
1.EMITTER
2.COLLECTOR
3.BASE
T
J
T
stg
: -55 to +150
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= 100 A
I
E
=0
80
V
Collector-emitter breakdown voltage
V(BR)
CEO
I
C
= 10mA , I
B
=0
60
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= 10 A I
C
=0
8
V
Collector cut-off current
I
CBO
V
CB
=60V , I
E
=0
0.1
A
Emitter cut-off current
I
EBO
V
EB
=5V , I
C
=0
0.1
A
DC current gain
h
FE
V
CE
=2 V, I
C
= 50mA
40
240
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 500m A, I
B
= 50mA
0.7
V
Base-emitter voltage
V
BE(sat)
I
C
= 500 mA, I
B
= 50mA
1.2
V
Collector output capacitance
C
ob
(V
CB
=10V I
E
=0,f=1MHz)
8
pF
Transition frequency
f
T
V
CE
= 10 V, I
C
= 50mA
30
MHz
CLASSIFICATION OF h
FE
(1)
Rank
R
O
Y
Range
40-80
70-140
120-240
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