JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
KTC2316
TRANSISTOR (NPN)
FEATURES
Power dissipation
P
CM:
0.9 W (Tamb=25
)
Collector current
I
CM:
0.8 A
Collector-base voltage
V
(BR)CBO
: 120 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=
1
mA, I
E
=0
120
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=
10
mA, I
B
=0
120
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=1mA, I
C
=0
5
V
Collector cut-off current
I
CBO
V
CB
=
120
V, I
E
=0
0.1
A
Emitter cut-off current
I
EBO
V
EB
=
4
V, I
C
=0
0.1
A
h
FE(1)
V
CE
=
5
V, I
C
=
10
mA
60
DC current gain
h
FE(2)
V
CE
=
5
V, I
C
=
100
mA
80
240
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
500
mA, I
B
=
50
mA
1
V
Transition frequency
f
T
V
CE
=
5
V, I
C
=
100
mA
120
MHz
Collector output capacitance
C
ob
V
CB
=
10
V, I
E
=0, f=
1
MHz
30
pF
CLASSIFICATION OF h
FE(1)
Rank
O Y
Range
80-160 120-240
Marking
1 2 3
TO-92L
1.
EMITTER
2.
COLLECTOR
3.
BASE
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