JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
M8050
TRANSISTOR
NPN
FEATURES
Power dissipation
P
CM
: 0.625 W
Tamb=25
Collector current
I
CM
: 1 A
Collector-base voltage
V
(BR)CBO
: 40 V
Operating and storage junction temperature range
T
J
T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= 100
A
I
E
=0
40
V
Collector-emitter breakdown voltage
V(BR)
CEO
* I
C
= 0.1mA , I
B
=0
25
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= 100
A
I
C
=0
6
V
Collector cut-off current
I
CBO
V
CB
= 35V , I
E
=0
0.1
A
Collector cut-off current
I
CEO
V
CE
= 20V , I
B
=0
0.1
A
h
FE(1)
V
CE
=1V, I
C
=5mA
45
h
FE(2)
V
CE
=1V, I
C
=100mA
80
300
DC current gain
h
FE
3
V
CE
=1V, I
C
=800mA
40
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 800mA, I
B
=80mA
0.5
V
Base-emitter saturation voltage
V
BE(sat)
I
C
=800mA, I
B
= 80mA
1.2
V
Transition frequency
f
T
V
CE
=6V, I
C
= 20mA , f=30MHz
150
MHz
* Pulse Test
pulse width
300s
duty cycle
2%
1
2
3
TO
--
92
1.EMITTER
2. BASE
3. COLLECTOR
D
b
E
A
A
1
C
L
D1
e
e1
TO-92 PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Min
3.300
1.100
0.380
0.360
4.400
3.430
4.300
2.440
14.100
0.000
Max
3.700
1.400
0.550
0.510
4.700
4.700
2.640
14.500
1.600
0.380
Min
0.130
0.043
0.015
0.014
0.173
0.135
0.169
0.096
0.555
0.000
Max
0.146
0.055
0.022
0.020
0.185
0.185
0.104
0.571
0.063
0.015
Dimensions In Millimeters
Dimensions In Inches
0.050TYP
1.270TYP
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