JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
PCR 0.6 A
Silicon Planar pnpn Thyristor
FEATURES
Current-I
GT
:120
A
I
TRMS
: 0.6A
V
DRM
: 400V
Operating and storage junction temperature range
T
J
T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
On state voltage
V
TM
I
TM
=0.6A
1.7
V
Gate trigger voltage
V
GTF
V
AK
=7V
0.8
V
Repetitive peak off-state voltage
V
DRM
I
DRM
= 10
A
400
V
Holding current
I
H
I
HL
= 20 mA , Av = 7 V
5
mA
A2
5
15
A
A1
15
30
A
A-1
30
45
A
A-2
45
60
A
A
60
80
A
Gate trigger current
I
GTF
B
V
AR
=7V
80
120
A
1
2
3
TO
--
92
1.CATHODE
2.GATE
3.ANODE
D
b
E
A
A
1
C
L
D1
e
e1
TO-92 PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Min
3.300
1.100
0.380
0.360
4.400
3.430
4.300
2.440
14.100
0.000
Max
3.700
1.400
0.550
0.510
4.700
4.700
2.640
14.500
1.600
0.380
Min
0.130
0.043
0.015
0.014
0.173
0.135
0.169
0.096
0.555
0.000
Max
0.146
0.055
0.022
0.020
0.185
0.185
0.104
0.571
0.063
0.015
Dimensions In Millimeters
Dimensions In Inches
0.050TYP
1.270TYP
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