1
.
9
0
.
9
5
0
.
9
5
2
.
9
0
.
4
1. 3
2. 4
1
.
0
JIANGSU CHANGJIANG ELECTRONICS INDUSTIAL CO., LTD
SOT-23 Plastic-Encapsulate Transistors
S9016LT1
TRANSISTOR (NPN)
FEATURES
Power dissipation
P
CM:
200 mW (Tamb=25
)
Collector current
I
CM:
0.025 A
Collector-base voltage
V
(BR)CBO
: 30 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic= 100
A, I
E
=0
30 V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=
0.1mA,
I
B
=0 20 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=100
A, I
C
=0
5 V
Collector cut-off current
I
CBO
V
CB
=30V, I
E
=0
0.1
A
Emitter cut-off current
I
EBO
V
EB
= 3V, I
C
=0
0.1
A
DC current gain
H
FE(1)
V
CE
=5V, I
C
=
1mA 70 200
Collector-emitter saturation voltage
V
CE
(sat) I
C
=10mA, I
B
= 1mA
0.3
V
Transition frequency
f
T
V
CE
=5V, I
C
= 1mA
f=
100MHz
300 MHz
DEVICE MARKING
S9016LT1= Y6
Unit: mm
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
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