2002. 10. 9
1/1
SEMICONDUCTOR
TECHNICAL DATA
E30A23VPS, E30A23VPR
STACK SILICON DIFFUSED DIODE
Revision No : 1
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : I
O
=30A.
Zener Voltage : 23V(Typ.)
POLARITY
E30A23VPS E30A23VPR
(+ Type) (- Type)
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
A
B
D
E
1.55
PF
11.7+0.1/-0
3.85+0/-0.2
1.45 0.1
D
L1
B
G
L2
E
F1
F2
A
0.5
3.1
8.4 MAX
G
F2
L1
0.32
MILLIMETERS
DIM
F1
L2
DIM
MILLIMETERS
TYPE
R
S
POLARITY
21.5+0/-1.5
17.5+0/-1.5
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Peak Forward Voltage
V
FM
I
FM
=100A
-
-
1.17
V
Zener Voltage
V
Z
I
Z
=10mA
21
23
25
V
Repetitive Peak Reverse Current
I
RRM
V
R
=V
RM
-
-
10
A
Transient Thermal Resistance
V
F
I
FM
=100A
-
-
140
mV
Reverse Leakage Current
Under High Temperature
HIR
T
a
=150 , V
R
=V
RM
-
-
2.5
mA
Temperature Resistance
R
th
DC total junction to case
-
-
1.0
/W
CHARACTERISTIC
SYMBOL
RATING
UNIT
Average Forward Current
I
F(AV)
30
A
Peak 1 Cycle Surge Current
I
FSM
300(50Hz)
A
Repetitive Peak Reverse
Surge Current
I
RSM
30
A
Transient Peak Reverse Voltage
V
RSM
17
V
Peak Reverse Voltage
V
RM
17
V
Junction Temperature
T
j
-40 200
Storage Temperature Range
T
stg
-40 200
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