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Электронный компонент: E30A2CPR

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1998. 2. 19
1/1
SEMICONDUCTOR
TECHNICAL DATA
E30A2CPS, E30A2CPR
STACK SILICON DIFFUSED DIODE
Revision No : 0
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : I
O
=30A.
Reverse Voltage : 200V(Min.)
POLARITY
E30A2CPS (+ Type)
E30A2CPR (- Type)
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
A
B
D
E
1.55
PF
11.7+0.1/-0
3.85+0/-0.2
1.45 0.1
D
L1
B
G
L2
E
F1
F2
A
0.5
3.1
8.4 MAX
G
F2
L1
0.32
MILLIMETERS
DIM
F1
L2
DIM
MILLIMETERS
TYPE
R
S
POLARITY
21.5+0/-1.5
17.5+0/-1.5
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Peak Forward Voltage
V
FM
I
FM
=100A
-
-
1.17
V
Reverse Voltage
V
RM
I
R
=5mA
200
-
-
V
Repetitive Peak Reverse Current
I
RRM
V
R
=200V
-
-
50
A
Reverse Recovery Time
t
rr
I
F
=-I
R
100mA
-
-
15
S
Transient Thermal Resistance
V
F
I
FM
=100A, Im=100mA,
Pt=100mS
-
-
140
mV
Reverse Leakage Current Under
High Temperature
HI
R
Ta=150 , V
R
=V
RM
-
-
2.5
mA
Temperature Resistance
R
th
Junction to Case
-
0.86
0.86
/W
Junction to Fin
-
1.07
1.07
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak
Reverse Voltage
V
RRM
200
V
Non-Repetitive Peak
Reverse Voltage
P
RM
1.35
(Pulse duration 30 S
Non-repetitive)
kW
Average Forward Current
I
F(AV)
30
A
Peak 1 Cycle Surge Current
I
FSM
350
(10mS Condition
Half sine wave 1 cycle)
A
Junction Temperature
T
j
-40 200
Storage Temperature Range
T
stg
-40 200