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Электронный компонент: E35A2CBR

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2002. 4. 9
1/1
SEMICONDUCTOR
TECHNICAL DATA
E35A2CBS, E35A2CBR
STACK SILICON DIFFUSED DIODE
Revision No : 2
DIM
MILLIMETERS
B-PF
11.5 MAX
12.75+0.09-0.00
1.3 0.04
4.2 0.2
8.0 0.2
TYP 0.5
10.0 0.2
0.4 0.1x45
0.2+0.1
28.35 0.5
A
8.5 MAX
H
B
C
D
E
F
G
H
I
J
K
F
E I
D
G
B
J
K
A
+
_
+
_
+
_
+
_
+
_
+
_
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : I
O
=35A.
Repetive Peak Reverse Voltage : V
RRM
=200V
POLARITY
E35A2CBS E35A2CBR
(+ Type) (- Type)
MAXIMUM RATING (Ta=25)
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Average Forward Current
I
F(AV)
35
A
Peak 1 Cycle Surge Current
I
FSM
300 (60Hz)
A
Repetitive Peak Revese Voltage
V
RRM
200
V
Junction Temperature
T
j
-40215
Storage Temperature Range
T
stg
-40215
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F
I
FM
=100A
-
-
1.10
V
Reverse Voltage
V
R
I
R
=5mA
200
-
-
V
Reverse Current
I
R
V
R
=200V
-
-
50
A
Transient Thermal Resistance
V
F
I
FM
=100A, I
M
=100mA, Pw=100ms
-
-
100
mV
Reverse Leakage Current Under
High Temperature
HI
R
Ta=150, V
R
=200V
-
-
2.5
mA
Reverse Recovery Time
t
rr
I
F
=0.1A, I
R
=0.1A
-
-
15
s
Temperature Resistance
R
th
DC total Junction to case
-
-
0.8
/W