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2002. 10. 9
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SEMICONDUCTOR
TECHNICAL DATA
E35A2CDS, E35A2CDR
STACK SILICON DIFFUSED DIODE
Revision No : 1
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : I
O
=35A.
Reverse Voltage : 200V(Min)
POLARITY
E35A2CDS E35A2CDR
(+ Type) (- Type)
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
A
B
C
D
1
PD
9.5 0.2
8.4 0.2
1.2
R0.5
1.5
5 0.4
G
F
L1
3.1 0.1
MILLIMETERS
DIM
E
L2
DIM
MILLIMETERS
TYPE
R
S
POLARITY
23.0 1.0
19.0 1.0
A
B
E
C
D
F
L1
G
L2
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F
I
FM
=100A
-
-
1.05
V
Reverse Voltage
V
R
I
R
=5mA
200
-
-
V
Reverse Current
I
R
V
R
=200V
-
-
50
A
Reverse Recovery Time
t
rr
I
F
=0.1A, I
R
=0.1A
-
-
15
S
Reverse Leakage Current Under
High Temperature
HI
R
Ta=150 , V
R
=200v
-
-
2.5
mA
Temperature Resistance
R
th
DC total Junction to case
-
0.8
-
/W
CHARACTERISTIC
SYMBOL
RATING
UNIT
Average Forward Current
I
F(AV)
35
A
Peak 1 Cycle Surge Current
I
FSM
350 (60Hz)
A
Repetitive Peak Revese Voltage
V
RRM
200
V
Junction Temperature
T
j
-40 200
Storage Temperature Range
T
stg
-40 200