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Электронный компонент: KDR105

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2003. 2. 25
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDR105
SCHOTTKY BARRIER TYPE DIODE
Revision No : 2
High frequency rectification
(Switching regulators, converters, choppers)
FEATURES
Low Forward Voltage : V
F
max=0.55V.
Low Leakage Current : I
R
max=10 A.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
A
B
D
E
1. NC
2. ANODE
3. CATHODE
USM
2.00 0.20
1.25 0.15
0.90 0.10
0.3+0.10/-0.05
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
C
G
H
J
K
L
K
1
3
2
E
B
D
A
J
G
C
L
H
M
M
N
N
M
0.42 0.10
N
0.10 MIN
3
2
1
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Marking
D L
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
V
R
I
R
=50 A
50
-
-
V
Forward Voltage
V
F
I
F
=0.1A
-
-
0.55
V
Reverse Current
I
R
V
R
=25V
-
-
10
A
Total Capacitance
C
T
V
R
=10V, f=1MHz
-
7.7
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
V
RRM
50
V
Reverse Voltage
V
R
50
V
Average Forward Current
I
O
0.1
A
Non-repetitive Peak Surge Current
I
FSM
2
A
Junction Temperature
T
j
125
Storage Temperature
T
stg
-55 125
2003. 2. 25
2/2
KDR105
Revision No : 2
I - V
R
REVERSE VOLTAGE V (V)
0
10
REVERSE CURRENT I (nA)
R
R
10
2
10
R
3
10
I - V
F
FORWARD VOLTAGE V (mV)
F
FORWARD CURRENT I (uA)
F
F
0
100
2
10
3
10
4
10
5
10
0.1
1
10
30
REVERSE VOLTAGE V (V)
10
1
10
0
R
20
2
10
V - C
R
40
200
300
400
500
600
20
30
40
50
CAPACITANCE C (pF)