2001. 6. 7
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SEMICONDUCTOR
TECHNICAL DATA
KDR378E
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
HIGH SPEED SWITCHING.
FEATURES
Low Forward Voltage : V
F
=0.24(Typ.) I
F
=5mA
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
A
B
D
E
ESM
1.60 0.10
0.85 0.10
0.70 0.10
0.27+0.10/-0.05
1.60 0.10
1.00 0.10
0.50
0.13 0.05
C
G
H
J
1
3
2
E
B
D
A
G
H
C
J
1. ANODE 1
2. ANODE 2
3. CATHODE
3
2
1
+
_
+
_
+
_
+
_
+_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Marking
X 3
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
V
RRM
15
V
Reverse Voltage
V
R
10
V
Average Forward Current
I
O
0.1
A
Non-repetitive Peak Surge Current
I
FSM
1
A
Power Dissipation
P
D
100
mW
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55 125
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F(1)
I
F
=1mA
-
0.19
-
V
V
F(2)
I
F
=5mA
-
0.24
-
V
F(3)
I
F
=100mA
-
0.39
0.50
Reverse Current
I
R
V
R
=10V
-
-
20
A
Total Capacitance
C
T
V
R
=0V, f=1MHz
-
14
30
pF
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