2002. 10. 2
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDR411S
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
LOW POWER RECTIFICATION
FOR SWITCHING POWER SUPPLY.
FEATURES
Small Surface Mounting Type. (SOT-23)
Low Forward Voltage : V
F
max=0.5V
High Reliability
CONSTRUCTION
Silicon epitaxial planar.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. NC
2. ANODE
3. CATHODE
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
2
1
3
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Type Name
Marking
Lot No.
U 3
CHARACTERISTIC
SYMBOL
RATING
UNIT
Peak Reverse Voltage
V
RM
40
V
DC Reverse Voltage
V
R
20
V
Average Forward Current
I
O
0.5
A
Peak Forward Surge Current
I
FSM
3
A
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-40 +125
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F
(1)
I
F
=10mA
-
-
0.3
V
V
F
(2)
I
F
=500mA
-
-
0.5
V
Reverse Current
I
R
V
R
=10V
-
-
30
A
Total Capacitance
C
T
V
R
=10V, f=1MHz
-
20
-
pF
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