2001. 12. 13
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDS112E
SILICON EPITAXIAL TYPE DIODE
Revision No : 1
VHF TUNER BAND SWITCH APPLICATIONS.
FEATURES
Small Package.
Small Total Capacitance : C
T
=1.2pF(Max.).
Low Series Resistance : r
S
=0.6 (Typ.).
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
A
B
D
E
ESM
1.60 0.10
0.85 0.10
0.70 0.10
0.27+0.10/-0.05
1.60 0.10
1.00 0.10
0.50
0.13 0.05
C
G
H
J
1
3
2
E
B
D
A
G
H
C
J
1. ANODE 1
2. ANODE 2
3. CATHODE
3
2
1
+
_
+
_
+
_
+
_
+_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
V
R
30
V
Forward Current
I
F
50
mA
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55 125
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F
I
F
=2mA
-
-
0.85
V
Reverse Current
I
R
V
R
=15V
-
-
0.1
A
Reverse Voltage
V
R
I
R
=1 A
30
-
-
V
Total Capacitance
C
T
V
R
=6V, f=1MHz
-
0.8
1.2
pF
Series Resistance
r
s
I
F
=2mA, f=100MHz
-
0.6
0.9
Marking
B F
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