2002. 6. 3
1/1
SEMICONDUCTOR
TECHNICAL DATA
KDS121E
SILICON EPITAXIAL PLANAR DIODE
Revision No : 3
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package : ESM.
Low Forward Voltage : V
F
=0.9V (Typ.).
Fast Reverse Recovery Time : t
rr
=1.6ns(Typ.).
Small Total Capacitance : C
T
=0.9pF (Typ.).
MAXIMUM RATING (Ta=25)
DIM
MILLIMETERS
A
B
D
E
ESM
1.60 0.10
0.85 0.10
0.70 0.10
0.27+0.10/-0.05
1.60 0.10
1.00 0.10
0.50
0.13 0.05
C
G
H
J
1
3
2
E
B
D
A
G
H
C
J
1. ANODE 1
2. ANODE 2
3. CATHODE
3
2
1
+
_
+
_
+
_
+
_
+_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25)
Marking
B 3
CHARACTERISTIC
SYMBOL
RATING
UNIT
Maximum (Peak) Reverse Voltage
V
RM
85
V
Reverse Voltage
V
R
80
V
Maximum (Peak) Forward Current
I
FM
300 *
mA
Average Forward Current
I
O
100 *
mA
Surge Current (10ms)
I
FSM
2 *
A
Power Dissipation
P
D
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F(1)
I
F
=1mA
-
0.60
-
V
V
F(2)
I
F
=10mA
-
0.72
-
V
F(3)
I
F
=100mA
-
0.90
1.20
Reverse Current
I
R
V
R
=80V
-
-
0.5
A
Total Capacitance
C
T
V
R
=0, f=1MHz
-
0.9
3.0
pF
Reverse Recovery Time
t
rr
I
F
=10mA
-
1.6
4.0
nS
Note : * Unit Rating. Total Rating=Unit Rating x 1.5
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