2001. 12. 13
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDS160E
SILICON EPITAXIAL PLANAR DIODE
Revision No : 3
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package : ESC.
Low Forward Voltage.
Fast Reverse Recovery Time.
Small Total capacitance.
MAXIMUM RATING (Ta=25 )
ESC
DIM
MILLIMETERS
A
B
C
D
E
1.60 0.10
1.20 0.10
0.80 0.10
0.30 0.05
0.60 0.10
CATHODE MARK
D
C
B
A
1
2
E
1. ANODE
2. CATHODE
F
0.13 0.05
F
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Type Name
Marking
F
U
CHARACTERISTIC
SYMBOL
RATING
UNIT
Maximum (Peak) Reverse Voltage
V
RM
85
V
Reverse Voltage
V
R
80
V
Maximum (Peak) Forward Current
I
FM
300
mA
Average Forward Current
I
O
100
mA
Surge Current (10mS)
I
FSM
2
A
Power Dissipation
P
D
-
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F(1)
I
F
=1mA
-
0.60
-
V
V
F(2)
I
F
=10mA
-
0.72
-
V
F(3)
I
F
=100mA
-
0.90
1.20
Reverse Current
I
R
V
R
=80V
-
-
0.5
A
Total Capacitance
C
T
V
R
=0V, f=1MHz
-
0.9
3.0
pF
Reverse Recovery Time
t
rr
I
F
=10mA
-
1.6
4.0
nS
2001. 12. 13
2/2
KDS160E
Revision No : 3
1
0.1
REVERSE VOLTAGE V (R)
R
R
T
C - V
REVERSE CURRENT I (
A)
R
10
0
REVERSE VOLTAGE V (V)
R
TOTAL CAPACITANCE C (pF)
0
I - V
I - V
F
FORWARD VOLTAGE V (V)
0
F
10
FORWARD CURRENT I (mA)
F
F
0.2
0.4
0.6
0.8
1.0
1.2
-2
-1
10
2
10
3
10
10
1
Ta
=10
0
C
Ta=
25
C
Ta=-25 C
R
R
20
40
60
80
-3
-2
10
-1
10
1
10
Ta=100 C
Ta=75 C
Ta=50 C
Ta=25 C
T
0.4
0.8
1.2
1.6
2.0
3
10
30
100
f=1MHz
Ta=25 C
t - I
F
FORWARD CURRENT I (mA)
0.1
0.5
rr
REVERSE RECOVERY TIME t (ns)
rr
F
0.3
1
3
10
30
100
1
3
5
10
30
50
100
Ta=25 C
Fig. 1
0.3
Fig. 1. REVERSE RECOVERY TIME(t ) TEST CIRCUIT
rr
50
2k
E
50
INPUT
WAVEFORM
INPUT
0.01
F
DUT
OUTPUT
SAMPLING
OSCILLOSCOPE
(R =50
)
IN
WAVEFORM
0.1 I
R
0
I
R
F
I =10mA
rr
t
PULSE GENERATOR
(R =50
)
OUT
50ns
-6V
0
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