2000. 6. 9
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDV152S
Revision No : 2
VCO for CB, C/P PLL APPLICATION.
FEATURES
Low Series Resistance : r
S
=0.3(Typ.).
Small Package.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. NC
2. ANODE
3. CATHODE
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
2
1
3
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
V
R
I
R
=10 A
15
-
-
V
Reverse Current
I
R
V
R
=15V
-
-
50
nA
Capacitance
C
2V
V
R
=2V, f=1MHz
42
-
47.5
pF
C
8V
V
R
=8V, f=1MHz
24
-
28.8
Capacitance Ratio
C
2V/
C
8V
1.60
-
1.8
Series Resistance
r
S
C=38pF, f=100MHz
-
0.3
0.4
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
V
R
15
V
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Type Name
Marking
Lot No.
N3
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