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Электронный компонент: KDV175E

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2002. 6. 14
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDV175E
SILICON EPITAXIAL PIN TYPE DIODE
Revision No : 1
VHFUHF BAND RF ATTENUATOR APPLICATIONS.
AGC FOR AM/FM TUNER.
FEATURES
Low Capacitance : C
T
=0.25[pF] (Typ.)
Low Series resistance : r
S
=7[] (Typ.).
Designed for low Inter Modulation.
Small Package : ESC.
MAXIMUM RATING (Ta=25)
ESC
DIM
MILLIMETERS
A
B
C
D
E
1.60 0.10
1.20 0.10
0.80 0.10
0.30 0.05
0.60 0.10
C
A
T
H
O
D
E

M
A
R
K
D
C
B
A
1
2
E
1. ANODE
2. CATHODE
F
0.13 0.05
F
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
V
R
50
V
Forward Current
I
F
50
mA
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55150
Type Name
Marking
E
U
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
V
R
I
R
=10A
50
-
-
V
Reverse Current
I
R
V
R
=50V
-
-
0.1
A
Forward Voltage
V
F
V
F
=50mA
-
0.95
-
V
Total Capacitance
C
T
V
R
=50V, f=1MHz
-
0.25
-
pF
Series Resistance
r
s
I
F
=10mA, f=100MHz
-
7.0
-
2002. 6. 14
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KDV175E
Revision No : 1
10
S
E
R
I
E
S

R
E
S
I
S
T
A
N
C
E

r




(
)
2
s
10
FORWARD CURRENT I (A)
F
r - I
C - V
R
REVERSE VOLTAGE V (V)
1
3
30
10
0.1
T
T
O
T
A
L

C
A
P
A
C
I
T
A
N
C
E

C





(
p
F
)
T
R
5
5
0
0.3
0.5
1
2
f=1MHz
Ta=25 C
s
F
100
1m
10m
5
30
50
100
300
500
1k
2k
Ta=25 C
f=0.2GHz
0.4
0.6
0.8
1.0
1.0
0.8
0.6
0.4
f=0.2GHz
50m