2002. 6. 14
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SEMICONDUCTOR
TECHNICAL DATA
KDV214
Revision No : 2
TV TUNING.
FEATURES
High Capacitance Ratio : C2V/C25V=6.5(Typ.)
Low Series Resistance : r
S
=0.4(Typ.)
Excellent C-V Characteristics, and Small Tracking Error.
Useful for Small Size Tuner.
MAXIMUM RATING (Ta=25)
USC
DIM
MILLIMETERS
A
B
C
D
E
F
G
H
J
K
2.50 0.1
1.25 0.05
0.90 0.05
0.30+0.06/-0.04
1.70 0.05
MIN 0.17
0.126 0.03
0~0.1
0.15 0.05
0.4 0.05
2 +4/-2
L
M
4~6
I
1.0 MAX
C
A
T
H
O
D
E
M
A
R
K
M
M
I
C
J
G
D
2
1
B
1. ANODE
2. CATHODE
E
K
A
F
H
L
+
_
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25)
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
V
R
30
V
Peak Reverse Voltage
V
RM
35 (R
L
=10k)
V
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55125
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
V
R
I
R
=1A
30
-
-
V
Reverse Current
I
R
V
R
=28V
-
-
10
nA
Capacitance
C
2V
V
R
=2V, f=1MHz
14.16
-
16.25
pF
Capacitance
C
25V
V
R
=25V, f=1MHz
2.11
-
2.43
pF
Capacitance Ratio
C
2V
/C
25V
5.90
6.50
7.15
-
Series Resistance
r
S
V
R
=5V, f=470MHz
-
0.4
0.55
Type Name
Marking
O
U
Note : Available in matched group for capacitance to 2.5%.
C(Max.)-C(Min.)
0.025
C(Min.)
(V
R
=2~25V)
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