2000. 3. 7
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDV239E
Revision No : 0
VCO FOR UHF RADIO.
FEATURES
Ultra Low Series Resistance : r
S
=0.44 (Typ.)
Small Package. (ESC Package)
MAXIMUM RATING (Ta=25 )
ESC
DIM
MILLIMETERS
A
B
C
D
E
1.60 0.10
1.20 0.10
0.80 0.10
0.30 0.05
0.60 0.10
CATHODE MARK
D
C
B
A
1
2
E
1. ANODE
2. CATHODE
F
0.13 0.05
F
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
Type Name
Marking
J
U
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
V
R
15
V
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
V
R
I
R
=1 A
15
-
-
V
Reverse Current
I
R
V
R
=15V
-
-
3
nA
Capacitance
C
2V
V
R
=2V, f=1MHz
3.8
4.25
4.7
pF
C
10V
V
R
=10V, f=1MHz
1.5
1.75
2.0
Capacitance Ratio
K
C
2V
/C
10V
, f=1MHz
2.0
2.4
-
Series Resistance
r
S
V
R
=1V, f=470MHz
-
0.44
0.6
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