2003. 3. 25
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDV258E
Revision No : 0
VCO FOR UHF/VHF BAND.
FEATURES
High Capacitance Ratio : C
1V
/C
4V
=2.0(Min.)
Low Series Resistance : r
s
=0.45 (Max.)
MAXIMUM RATING (Ta=25 )
ESC
DIM
MILLIMETERS
A
B
C
D
E
1.60 0.10
1.20 0.10
0.80 0.10
0.30 0.05
0.60 0.10
CATHODE MARK
D
C
B
A
1
2
E
1. ANODE
2. CATHODE
F
0.13 0.05
F
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
Type Name
Marking
6
U
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
V
R
15
V
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
V
R
I
R
=1 A
15
-
-
V
Reverse Current
I
R
V
R
=10V
-
-
10
nA
Capacitance
C
1V
V
R
=1V, f=1MHz
19.0
-
21.0
pF
C
4V
V
R
=4V, f=1MHz
8.5
-
10.0
Capacitance Ratio
K
-
2.0
-
-
Series Resistance
r
S
V
R
=1V, f=470MHz
-
-
0.45
PDF 
ZIP