2003 1. 27
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SEMICONDUCTOR
TECHNICAL DATA
KDV275
Revision No : 0
VCO FOR UHF/VHF BAND.
FEATURES
High Capacitance Ratio : C
1V
/C
4V
=3.4(Min.)
Low Series Resistance
Excellent Linearity (CV Curve)
MAXIMUM RATING (Ta=25 )
USC
DIM
MILLIMETERS
A
B
C
D
E
F
G
H
J
K
2.50 0.1
1.25 0.05
0.90 0.05
0.30+0.06/-0.04
1.70 0.05
MIN 0.17
0.126 0.03
0~0.1
0.15 0.05
0.4 0.05
2 +4/-2
L
M
4~6
I
1.0 MAX
CATHODE MARK
M
M
I
C
J
G
D
2
1
B
1. ANODE
2. CATHODE
E
K
A
F
H
L
+
_
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
Grade
Type Name
Marking
C
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
V
R
28
V
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
V
R
I
R
=10 A
20
-
-
V
Reverse Current
I
R
V
R
=16V
-
-
5
nA
Capacitance
C
1V
V
R
=1V, f=1MHz
15.40
16.60
17.90
pF
C
2V
V
R
=2V, f=1MHz
8.50
10.20
11.90
C
4V
V
R
=4V, f=1MHz
3.60
4.30
5.05
Capacitance Ratio
K
C
1V
/C
4V
, f=1MHz
3.4
-
-
Series Resistance
r
S
C
T
=8pF, f=470MHz
-
-
0.7
CLASSIFICATION OF CAPACITANCE GRADE
GRADE
CAPACITANCE (C
2V
)
UNIT
A
8.5 9.15
pF
B
9.05~9.85
pF
C
9.75 10.65
pF
D
10.55~11.35
pF
E
11.25~11.90
pF
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