2001. 6. 11
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SEMICONDUCTOR
TECHNICAL DATA
KDV350
Revision No : 1
VCO.
FEATURES
Low Series Resistance : r
S
=0.50 (Max.)
Small Package.
MAXIMUM RATING (Ta=25 )
USC
DIM
MILLIMETERS
A
B
C
D
E
F
G
H
J
K
2.50 0.1
1.25 0.05
0.90 0.05
0.30+0.06/-0.04
1.70 0.05
MIN 0.17
0.126 0.03
0~0.1
0.15 0.05
0.4 0.05
2 +4/-2
L
M
4~6
I
1.0 MAX
CATHODE MARK
M
M
I
C
J
G
D
2
1
B
1. ANODE
2. CATHODE
E
K
A
F
H
L
+
_
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
Type Name
Marking
K
U
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
V
R
15
V
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
V
R
I
R
=1 A
15
-
-
V
Reverse Current
I
R
V
R
=15V
-
-
10
nA
Capacitance
C
1V
V
R
=1V, f=1MHz
15.0
-
17.5
pF
C
4V
V
R
=4V, f=1MHz
5.3
-
6.3
Capacitance Ratio
K
C
1V
/C
4V
, f=1MHz
2.8
-
-
Series Resistance
r
S
V
R
=1V, f=470MHz
-
-
0.5
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