2006. 2. 20
1/7
SEMICONDUCTOR
TECHNICAL DATA
KHB7D0N65P1/F1
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
Revision No : 1
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
V
DSS
=650V, I
D
=7A
Drain-Source ON Resistance :
R
DS(ON)
=1.4
@V
GS
=10V
Qg(typ.)= 32nC
MAXIMUM RATING (Tc=25 )
* : Drain current limited by maximum junction temperature.
G
D
S
CHARACTERISTIC
SYMBOL
RATING
UNIT
KHB7D0N65P1 KHB7D0N65F1
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
30
V
Drain Current
@T
C
=25
I
D
7
7*
A
@T
C
=100
4.2
4.2*
Pulsed (Note1)
I
DP
28
28*
Single Pulsed Avalanche Energy
(Note 2)
E
AS
212
mJ
Repetitive Avalanche Energy
(Note 1)
E
AR
1.6
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
4.5
V/ns
Drain Power
Dissipation
Tc=25
P
D
160
52
W
Derate above 25
1.28
0.42
W/
Maximum Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case
R
thJC
0.78
2.4
/W
Thermal Resistance, Case-to-Sink
R
thCS
0.5
-
/W
Thermal Resistance,
Junction-to-Ambient
R
thJA
62.5
62.5
/W
DIM
MILLIMETERS
TO-220AB
1.46
A
B
C
D
E
F
G
H
J
K
M
N
O
0.8 0.1
+
_
2.8 0.1
+
_
2.54 0.2
+
_
1.27 0.1
+
_
1.4 0.1
+
_
13.08 0.3
+
_
3.6 0.2
+
_
+
_
9.9 0.2
+
_
9.2 0.2
+
_
4.5 0.2
+
_
2.4 0.2
15.95 MAX
1.3+0.1/-0.05
0.5+0.1/-0.05
3.7
1.5
A
F
B
J
G
K
M
L
L
E
I
I
O
C
H
N
N
Q
D
Q
P
P
1. GATE
2. DRAIN
3. SOURCE
1
2
3
DIM MILLIMETERS
TO-220IS
A
A
B
B
C
C
D
D
E
E
F
F
G
G
H
H
1.47 MAX
13.0 MAX
J
J
K
K
L
L
M
M
M
N
N
O
O
P
Q
Q
1
2
3
1. GATE
2. DRAIN
3. SOURCE
3.18 0.1
+
_
0.8 0.1
+
_
3.3 0.1
+
_
0.5 0.1
+
_
10.16 0.2
+
_
15.87 0.2
+
_
12.57 0.2
+
_
2.54 0.2
+
_
2.54 0.2
+
_
2.76 0.2
+
_
6.68 0.2
+
_
4.7 0.2
+
_
3.23 0.1
+
_
6.5
P
2006. 2. 20
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KHB7D0N65P1/F1
Revision No : 1
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250 A, V
GS
=0V
650
-
-
V
Breakdown Voltage Temperature Coefficient
BV
DSS
/ T
j
I
D
=250 A, Referenced to 25
-
0.8
-
V/
Drain Cut-off Current
I
DSS
V
DS
=650V, V
GS
=0V,
-
-
10
A
Gate Threshold Voltage
V
th
V
DS
=V
GS
, I
D
=250 A
2
-
4
V
Gate Leakage Current
I
GSS
V
GS
= 30V, V
DS
=0V
-
-
100
nA
Drain-Source ON Resistance
R
DS(ON)
V
GS
=10V, I
D
=3.75A
-
1.2
1.4
Dynamic
Total Gate Charge
Q
g
V
DS
=520V, I
D
=7.0A
V
GS
=10V (Note4,5)
-
32
40
nC
Gate-Source Charge
Q
gs
-
5.4
-
Gate-Drain Charge
Q
gd
-
12.6
-
Turn-on Delay time
t
d(on)
V
DD
=325V
R
L
=46
R
G
=25
(Note4,5)
-
20
45
ns
Turn-on Rise time
t
r
-
40
90
Turn-off Delay time
t
d(off)
-
125
260
Turn-off Fall time
t
f
-
80
170
Input Capacitance
C
iss
V
DS
=25V, V
GS
=0V, f=1.0MHz
-
1310
1700
pF
Reverse Transfer Capacitance
C
rss
-
113
147
Output Capacitance
C
oss
-
11.4
14.8
Source-Drain Diode Ratings
Continuous Source Current
I
S
V
GS
<V
th
-
-
7
A
Pulsed Source Current
I
SP
-
-
28
Diode Forward Voltage
V
SD
I
S
=7.0A, V
GS
=0V
-
-
1.5
V
Reverse Recovery Time
t
rr
I
S
=7.0A, V
GS
=0V,
dIs/dt=100A/ s
-
410
-
ns
Reverse Recovery Charge
Q
rr
-
4
-
C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =8mH, I
S
=7.0A, V
DD
=50V, R
G
=25 , Starting T
j
=25 .
Note 3) I
S
7.0A, dI/dt 200A/ , V
DD
BV
DSS
, Starting T
j
=25 .
Note 4) Pulse Test : Pulse width
300 , Duty Cycle
2%.
Note 5) Essentially independent of operating temperature.
2006. 2. 20
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KHB7D0N65P1/F1
Revision No : 1
Normalized Breakdown Voltage BV
DSS
Gate - Source Voltage V
GS
(V)
I
D
- V
DS
Drain - Source Voltage V
DS
(V)
Drain Current I
D
(A)
10
0
10
1
10
-1
10
0
10
1
10
0
10
-1
10
1
6
8
4
10
2
I
D
- V
GS
BV
DSS
- Tj
R
DS(ON)
- I
D
-100
-50
0.8
0.9
1.2
1.1
1.0
0
50
100
150
Drain Current I
D
(A)
Drain Current I
D
(A)
On - Resistance R
DS(ON)
(
)
I
S
- V
SD
0.2
0.4
0.8
1.0
2.0
1.2
0.6
1.4
1.8
1.6
Reverse Drain Current I
S
(A)
3.0
2.5
1.5
1.0
2.0
0
10
5
15
Junction Temperature Tj ( )
C
Source - Drain Voltage V
SD
(V)
V
G
= 10V
V
G
= 20V
10
0
10
-1
10
1
R
DS(ON)
- Tj
Junction Temperature Tj ( )
0
50
-100
-50
100
150
Normalized On Resistance
0.0
0.5
3.0
2.5
1.0
1.5
2.0
C
V
GS
=10V
I
DS
= 3.75A
V
GS
= 0V
I
DS
= 250
150
C
25
C
-55
C
25
C
150 C
V
GS
TOP : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom : 5.0 V
2006. 2. 20
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KHB7D0N65P1/F1
Revision No : 1
Drain Current I
D
(A)
Gate - Charge Qg (nC)
C - V
DS
Drain - Source Voltage V
DS
(V)
Drain - Source Voltage V
DS
(V)
0
12
10
6
2
4
8
28
32
12
4
20
16
24
8
0
Qg- V
GS
Safe Operation Area
Capacitance (pF)
Gate - Source Voltage V
GS
(V)
0
500
1500
2000
4500
1000
2500
3500
3000
4000
10
-1
10
0
10
1
10
1
10
1
10
-1
10
0
10
0
10
2
10
2
10
3
Frequency = 1MHz
Drain Current I
D
(A)
Drain - Source Voltage V
DS
(V)
Safe Operation Area
10
1
10
1
10
-1
10
0
10
0
10
-2
10
2
10
3
0
6
2
4
8
75
150
125
50
100
25
Drain Current I
D
(A)
(KHB7D0N65P1)
(KHB7D0N65F1)
I
D
=7A
Operation in this
area is limited by R
DS(ON)
C
Junction Temperature Tj ( )
I
D
- T
j
Operation in this
area is limited by R
DS(ON)
V
DS
= 520V
V
DS
= 325V
V
DS
= 130V
Coss
Ciss
Crss
Tc= 25
Tj = 150
Single nonrepetitive pulse
C
C
Tc= 25
T
j
= 150
Single nonrepetitive pulse
C
C
DC
10
s
10 ms
1ms
100
s
DC
10ms
1ms
100
s
100ms
2006. 2. 20
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KHB7D0N65P1/F1
Revision No : 1
Square Wave Pulse Duration (sec)
R
th
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
10
-2
10
-1
10
0
{KHB7D0N65P1}
Square Wave Pulse Duration (sec)
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
10
-2
10
-1
10
0
{KHB7D0N65F1}
Normalized Transient Thermal Resistance
R
th
Normalized Transient Thermal Resistance
- Duty Factor, D= t
1
/t
2
T
j(max)
- T
c
- R
thJC
=
P
D
t
1
t
2
P
DM
- Duty Factor, D= t
1
/t
2
T
j(max)
- T
c
- R
thJC
=
P
D
t
1
t
2
P
DM
Sin
gle Pulse
Duty=0.5
0.02
0.05
0.1
0.2
0.01
Duty=0.5
0.02
0.05
0.1
0.2
0.01
Sin
gle Pulse
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