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SEMICONDUCTOR
TECHNICAL DATA
KHB9D0N50P1/F1
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
Revision No : 0
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
V
DSS(Min.)
= 500V, I
D
= 9A
Drain-Source ON Resistance :
R
DS(ON)
=0.8
@V
GS
=10V
Qg(typ.) =34.6nC
MAXIMUM RATING (Tc=25 )
* : Drain current limited by maximum junction temperature.
G
D
S
CHARACTERISTIC
SYMBOL
RATING
UNIT
KHB9D0N50P1 KHB9D0N50F1
Drain-Source Voltage
V
DSS
500
V
Gate-Source Voltage
V
GSS
30
V
Drain Current
@T
C
=25
I
D
9
9*
A
@T
C
=100
5.4
5.4*
Pulsed (Note1)
I
DP
36
36*
Single Pulsed Avalanche Energy
(Note 2)
E
AS
360
mJ
Repetitive Avalanche Energy
(Note 1)
E
AR
13.5
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
4.5
V/ns
Drain Power
Dissipation
Tc=25
P
D
135
44
W
Derate above25
1.07
0.35
W/
Maximum Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case
R
thJC
0.93
2.86
/W
Thermal Resistance, Case-to-Sink
R
thCS
0.5
-
/W
Thermal Resistance, Junction-to-
Ambient
R
thJA
62.5
62.5
/W
DIM
MILLIMETERS
TO-220AB
1.46
A
B
C
D
E
F
G
H
J
K
M
N
O
0.8 0.1
+
_
2.8 0.1
+
_
2.54 0.2
+
_
1.27 0.1
+
_
1.4 0.1
+
_
13.08 0.3
+
_
3.6 0.2
+
_
+
_
9.9 0.2
+
_
9.2 0.2
+
_
4.5 0.2
+
_
2.4 0.2
15.95 MAX
1.3+0.1/-0.05
0.5+0.1/-0.05
3.7
1.5
A
F
B
J
G
K
M
L
L
E
I
I
O
C
H
N
N
Q
D
Q
P
P
1. GATE
2. DRAIN
3. SOURCE
1
2
3
DIM MILLIMETERS
TO-220IS
A
A
B
B
C
C
D
D
E
E
F
F
G
G
H
H
1.47 MAX
13.0 MAX
J
J
K
K
L
L
M
M
M
N
N
O
O
P
Q
Q
1
2
3
1. GATE
2. DRAIN
3. SOURCE
3.18 0.1
+
_
0.8 0.1
+
_
3.3 0.1
+
_
0.5 0.1
+
_
10.16 0.2
+
_
15.87 0.2
+
_
12.57 0.2
+
_
2.54 0.2
+
_
2.54 0.2
+
_
2.76 0.2
+
_
6.68 0.2
+
_
4.7 0.2
+
_
3.23 0.1
+
_
6.5
P
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KHB9D0N50P1/F1
Revision No : 0
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250 A, V
GS
=0V
500
-
-
V
Breakdown Voltage Temperature Coefficient
BV
DSS
/ T
j
I
D
=250 A, Referenced to 25
-
0.57
-
V/
Drain Cut-off Current
I
DSS
V
DS
=500V, V
GS
=0V,
-
-
10
A
Gate Threshold Voltage
V
th
V
DS
=V
GS
, I
D
=250 A
2.0
-
4.0
V
Gate Leakage Current
I
GSS
V
GS
= 30V, V
DS
=0V
-
-
100
nA
Drain-Source ON Resistance
R
DS(ON)
V
GS
=10V, I
D
=4.5A
-
0.65
0.8
Dynamic
Total Gate Charge
Q
g
V
DS
=400V, I
D
=9A
V
GS
=10V (Note4,5)
-
34.6
40
nC
Gate-Source Charge
Q
gs
-
5.9
-
Gate-Drain Charge
Q
gd
-
15.5
-
Turn-on Delay time
t
d(on)
V
DD
=200V
R
L
=22
R
G
=25
(Note4,5)
-
23
45
ns
Turn-on Rise time
t
r
-
65
140
Turn-off Delay time
t
d(off)
-
148
241
Turn-off Fall time
t
f
-
81
140
Input Capacitance
C
iss
V
DS
=25V, V
GS
=0V, f=1.0MHz
-
1389
1805
pF
Reverse Transfer Capacitance
C
rss
-
155.7
202
Output Capacitance
C
oss
-
19.2
24.9
Source-Drain Diode Ratings
Continuous Source Current
I
S
V
GS
<V
th
-
-
9
A
Pulsed Source Current
I
SP
-
-
36
Diode Forward Voltage
V
SD
I
S
=9A, V
GS
=0V
-
-
1.5
V
Reverse Recovery Time
t
rr
I
S
=9A, V
GS
=0V,
dIs/dt=100A/ s
-
357
-
ns
Reverse Recovery Charge
Q
rr
-
4.87
-
C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 8mH, I
S
=9A, V
DD
=50V, R
G
= 25 , Starting T
j
= 25 .
Note 3) I
S
9A, dI/dt 200A/ , V
DD
BV
DSS
, Starting T
j
= 25 .
Note 4) Pulse Test : Pulse width
300 , Duty Cycle
2%.
Note 5) Essentially independent of operating temperature.
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KHB9D0N50P1/F1
Revision No : 0
Gate - Source Voltage V
GS
(V)
I
D
- V
DS
Drain - Source Voltage V
DS
(V)
Drain Current I
D
(A)
10
-1
10
0
10
1
10
-1
10
0
10
1
10
0
10
1
10
-1
6
8
4
10
2
I
D
- V
GS
R
DS(ON)
- I
D
R
DS(ON)
- Tj
Drain Current I
D
(A)
Drain Current I
D
(A)
On - Resistance R
DS(ON)
(
)
I
S
- V
SD
0.2
0.4
0.8
1.0
1.2
1.4
0.6
Reverse Drain Current I
S
(A)
0
0
2.0
1.0
0.5
1.5
0
5
10
25
20
15
50
-100
-50
100
150
Normalized On Resistance
V
GS
= 20V
V
GS
= 10V
Source - Drain Voltage V
SD
(V)
0.0
0.5
3.0
2.5
1.0
1.5
2.0
Junction Temperature Tj ( )
C
25 C
150 C
V
GS
= 10V
I
DS
= 4.5A
10
0
10
-1
10
1
V
GS
TOP : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
BV
DSS
- Tj
0.8
1.2
1.0
0.9
1.1
-100
100
0
150
-50
50
Normalized Breakdown Voltage BV
DSS
Junction Temperature Tj ( )
V
GS
= 0V
I
DS
= 250
A
C
150
C
25
C
-55
C
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KHB9D0N50P1/F1
Revision No : 0
Drain Current I
D
(A)
Gate - Charge Qg (nC)
Drain - Source Voltage V
DS
(V)
0
12
10
6
2
4
8
10
35
30
25
5
20
15
0
Qg- V
GS
Safe Operation Area
Gate - Source Voltage V
GS
(V)
10
1
10
0
10
2
10
3
DC
10ms
10
s
1ms
100
s
100ms
0
10
6
2
4
8
75
150
125
50
100
25
Drain Current I
D
(A)
(KHB9D0N50P1)
I
D
= 9A
C
Junction Temperature Tj ( )
I
D
- T
j
V
DS
= 250V
V
DS
= 100V
V
DS
= 400V
Tc= 25
T
j
= 150
Single nonrepetitive pulse
C
C
Drain Current I
D
(A)
Drain - Source Voltage V
DS
(V)
Safe Operation Area
10
1
10
0
10
2
10
3
DC
10ms
10
s
1ms
100
s
100ms
(KHB9D0N50F1)
Operation in this area
is limited by R
DS(ON)
Operation in this area
is limited by R
DS(ON)
Tc= 25
T
j
= 150
Single nonrepetitive pulse
C
C
10
1
10
-1
10
-2
10
0
10
2
10
1
10
-1
10
-2
10
0
10
2
C - V
DS
Drain - Source Voltage V
DS
(V)
Capacitance (pF)
0
400
1600
2000
2800
800
1200
2400
10
-1
10
0
10
1
Frequency = 1MHz
Crss
Coss
Ciss
2006. 1. 17
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KHB9D0N50P1/F1
Revision No : 0
{KHB9D0N50P1}
{KHB9D0N50F1}
Square Wave Pulse Duration (sec)
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
10
-2
10
-1
10
0
0.02
0.05
0.1
0.2
0.01
Square Wave Pulse Duration (sec)
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
10
-2
10
-1
10
0
0.02
0.05
0.1
0.2
0.01
R
th
Normalized Transient Thermal Resistance
Normalized Transient Thermal Resistance
R
th
Duty=0.5
- Duty Factor, D= t
1
/t
2
T
j(max)
- T
c
- R
thJC
=
P
D
t
1
t
2
P
DM
- Duty Factor, D= t
1
/t
2
T
j(max)
- T
c
- R
thJC
=
P
D
t
1
t
2
P
DM
Duty=0.5
Single Pulse
Single Pulse
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