2006. 2. 23
1/5
SEMICONDUCTOR
TECHNICAL DATA
KMA6D0P20X
P-CH Trench MOSFET
Revision No : 2
General Description
Battery Packs and Battery-powered portable equipment applications.
It's mainly suitable for use as a load switch in battery powered applications
and protection in battery packs.
FEATURES
V
DSS
=-20V, I
D
=-6.0A.
Drain-Source ON Resistance.
: R
DS(ON)
=35m (Max.) @ V
GS
=-4.5V.
: R
DS(ON)
=60m (Max.) @ V
GS
=-2.5V.
MAXIMUM RATING (Ta=25 )
* : Surface Mounted on 1
1 Board, t 10sec.
1
2
3
4
6
5
S
G
D
D
D
PIN CONNECTION (TOP VIEW)
G
S
D
D
D D
D
CHARACTERISTIC
SYMBOL RATING
UNIT
Drain-Source Voltage
V
DSS
-20
V
Gate-Source Voltage
V
GSS
12
V
Drain Current
DC
I
D
*
-6.0
A
Pulsed (Note2)
I
DP
-32
Drain Power Dissipation
Ta=25
P
D
*
2.1
W
Ta=100
0.85
Maximum Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Thermal Resistance, Junction to Ambient
R
thJA
*
59
/W
A
B
B1
D
D1
D2
E
E1
DIM
MILLIMETERS
A
B
B1
D
D1
D2
E
0.95 BSC
0.1 MAX
C
F
E1
3.05 0.1
+
_
0.95 0.05
+
_
0.45 0.15
+
_
1.0 0.1
+
_
2.85 0.15
+
_
+
_
1.65 0.1
+
_
0.15 0.05
0.60 REF
TSOP-6
C
F
1
4
3
6
2006. 2. 23
2/5
KMA6D0P20X
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note 1) Based on thermal dissipation from junction to ambient while mounted on a 1
1 PCB Board.
Note 2) Pulse test : Pulse width 300 .
Note 3) Guaranteed by design, not subject to production testing.
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=-250 A, V
GS
=0V,
-20
-
-
V
Drain Cut-off Current
I
DSS
V
DS
=-20V, V
GS
=0V,
-
-
-1
A
Gate Threshold Voltage
V
th
V
DS
=V
GS
, I
D
=-250 A
-0.6
-
-
V
Gate Leakage Current
I
GSS
V
GS
= 12V, V
DS
=0V
-
-
100
nA
Drain-Source ON Resistance
R
DS(ON)
V
GS
=-4.5V, I
D
=-6.0A (Note 2)
-
27
35
m
V
GS
=-2.5V, I
D
=-4.6A (Note 2)
-
46
60
Dynamic
(Note 3)
Total Gate Charge
Q
g
V
DS
=-10V, I
D
=-6.0A
V
GS
=-4.5V
(Fig.1)
-
14
-
nC
Gate-Source Charge
Q
gs
-
2.3
-
Gate-Drain Charge
Q
gd
-
5.5
-
Turn-on Delay time
t
d(on)
V
DD
=-10V,
R
L
=1.69 , R
G
=6
(Fig.2)
-
10
-
ns
Turn-on Rise time
t
r
-
37
-
Turn-off Delay time
t
d(off)
-
36
-
Turn-off Fall time
t
f
-
52
-
Source-Drain Diode Ratings
Continuous Source Current
I
S
V
GS
< V
th
(Note 1)
-
-
-1.9
A
Diode Forward Voltage
V
SD
I
S
=-6.0A, V
GS
=0V (Note 2)
-
-
-1.2
V
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