2001. 7. 23
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SEMICONDUCTOR
TECHNICAL DATA
KRA301V~KRA306V
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
DIM MILLIMETERS
A
B
D
E
VSM
1.2 0.05
0.8 0.05
0.5 0.05
0.3 0.05
1.2 0.05
0.8 0.05
0.40
0.12 0.05
C
G
H
J
K
0.2 0.05
B
E
D
G
A
H
K
C
J
2
3
1
P
P
P
5
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
TYPE NO.
R1(k )
R2(k )
KRA301V
4.7
4.7
KRA302V
10
10
KRA303V
22
22
KRA304V
47
47
KRA305V
2.2
47
KRA306V
4.7
47
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
KRA301V 306V
V
O
-50
V
Input Voltage
KRA301V
V
I
-20, 10
V
KRA302V
-30, 10
KRA303V
-40, 10
KRA304V
-40, 10
KRA305V
-12, 5
KRA306V
-20, 5
Output Current
KRA301V 306V
I
O
-100
mA
Power Dissipation
P
D
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE
KRA301V
KRA302V
KRA303V
KRA304V
KRA305V
KRA306V
MARK
PA
PB
PC
PD
PE
PF
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
BIAS RESISTOR VALUES
R1
R2
COMMON(+)
OUT
IN
MARK SPEC
Type Name
Marking