2001. 7. 23
1/4
SEMICONDUCTOR
TECHNICAL DATA
KRA307V~KRA309V
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors
Simplify Circuit Design
Reduce a Quantity of Parts and Manufacturing Process
High Packing Density.
DIM MILLIMETERS
A
B
D
E
VSM
1.2 0.05
0.8 0.05
0.5 0.05
0.3 0.05
1.2 0.05
0.8 0.05
0.40
0.12 0.05
C
G
H
J
K
0.2 0.05
B
E
D
G
A
H
K
C
J
2
3
1
P
P
P
5
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
TYPE NO.
R1(k )
R2(k )
KRA307V
10
47
KRA308V
22
47
KRA309V
47
22
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
KRA307V 309V
V
O
-50
V
Input Voltage
KRA307V
V
I
-30, 6
V
KRA308V
-40, 7
KRA309V
-40, 15
Output Current
KRA307V 309V
I
O
-100
mA
Power Dissipation
P
D
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE
KRA307V
KRA308V
KRA309V
MARK
PH
PI
PJ
EQUIVALENT CIRCUIT
BIAS RESISTOR VALUES
MAXIMUM RATING (Ta=25 )
MARK SPEC
R1
R2
COMMON(+)
OUT
IN
Type Name
Marking
PDF 
ZIP
